1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
3.

Conference Proceedings
Conference Proceedings
3. Surface Preparation and Oxide Growth for GaN MOSFETs*
Gila, B.P. ; Johnson, J.W. ; Lee, K.N. ; Krishnamoorthy, V. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.71-83,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
4.

Conference Proceedings
Conference Proceedings
4. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
5.

Conference Proceedings
Conference Proceedings
5. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
6.

Conference Proceedings
Conference Proceedings
6. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
7.

Conference Proceedings
Conference Proceedings
7. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
8.

Conference Proceedings
Conference Proceedings
8. Non-Alloyed Ohmic Contacts on n-Type InP with Nitridation of Patterned InP Surface
Ren, F. ; Pearton, S. J. ; Lothian, J.R. ; Chu, S.N.G. ; Chu, W.K. ; Wilson, R.G. ; Abernathy, C.R. ; Pei, S.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.304-310,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
9.

Conference Proceedings
Conference Proceedings
9. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
10.

Conference Proceedings
Conference Proceedings
10. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
11.

Conference Proceedings
Conference Proceedings
11. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
12.

Conference Proceedings
Conference Proceedings
12. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
13.

Conference Proceedings
Conference Proceedings
13. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
14.

Conference Proceedings
Conference Proceedings
14. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Kim. J. ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo. B. ; Oristine, A. ; Abernathy, C.R. ; Prarton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.184-190,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
15.

Conference Proceedings
Conference Proceedings
15. III-N Based Dilute Magnetic Semiconductors for Spintronics Applications*
Park, Y.D. ; Lee, J.S. ; Lee, S.-Y. ; Khim, Z.G. ; Oh, E. ; Thaler, G.T. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Kim, J.-H ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.22-27,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
16.

Conference Proceedings
Conference Proceedings
16. Low Dit Dielectric/GaN MOS Systems
Hong, M. ; Ng, H.M. ; Kwo, J. ; Kortan, A.R. ; Baillargeon, J.N. ; Chu, S.N.G. ; Mannaerts, J.P. ; Cho, A.Y. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.103-109,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
17.

Conference Proceedings
Conference Proceedings
17. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
18.

Conference Proceedings
Conference Proceedings
18. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
19.

Conference Proceedings
Conference Proceedings
19. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
20.

Conference Proceedings
Conference Proceedings
20. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
21.

Conference Proceedings
Conference Proceedings
21. AIGaN Power Rectifiers *
Pearton, S.J. ; Kim, J. ; Ren, F. ; Baik, K ; Gila, B.P. ; Abernathy, C.R. ; Irokawa, Y. ; Chyi, J-I. ; Park, S.S. ; Park, Y.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.180-207,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
22.

Conference Proceedings
Conference Proceedings
22. HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs
Fullowan, T.R. ; Ren, F. ; Tseng, B. ; Pearton, S.J. ; Abernathy, C.R. ; Harriott, L.R. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.239-246,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
23.

Conference Proceedings
Conference Proceedings
23. TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx
Lothian, J.R. ; Ren, F. ; Pearton, S.J. ; Chakrabarti, U.K. ; Abernathy, C.R. ; Katz, A.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.259-266,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
24.

Conference Proceedings
Conference Proceedings
24. GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY
Wisk, P.W. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Lothian, J.R. ; Katz, A. ; Jones, K.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.599-604,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
25.

Conference Proceedings
Conference Proceedings
25. InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, P.W. ; Esagui, R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
26.

Conference Proceedings
Conference Proceedings
26. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
27.

Conference Proceedings
Conference Proceedings
27. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
28.

Conference Proceedings
Conference Proceedings
28. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
29.

Conference Proceedings
Conference Proceedings
29. Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN *
Thaler, G.T. ; Overberg, M. ; Frazier, R. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Park, Y.D. ; Rairigh, R. ; Kelly, J. ; Lee, J.S. ; Theodoropoulou, N. ; Hebard, A.F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.141-145,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
30.

Conference Proceedings
Conference Proceedings
30. The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides
Vartuli, C.B. ; Pearton, S.J. ; Abernathy, C.R. ; Shul, R.J. ; Ren, F.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.39-56,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
31.

Conference Proceedings
Conference Proceedings
31. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
32.

Conference Proceedings
Conference Proceedings
32. MBE growth of oxides for III-N MOSFETs
Gila, B. ; Lee, K.N. ; Laroche, J. ; Ren, F. ; Donovan, S.M. ; Abernathy, C.R. ; Han, J.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.247-252,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
33.

Conference Proceedings
Conference Proceedings
33. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
34.

Conference Proceedings
Conference Proceedings
34. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
35.

Conference Proceedings
Conference Proceedings
35. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
36.

Conference Proceedings
Conference Proceedings
36. Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
Gila, B. ; Onstine, A.H. ; Hlad, M ; Gerger, A. ; Herrero, A. ; Allums, K.K. ; Stodilka, D. ; Jang, S. ; Kang, S. ; Anderson, T. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.247-261,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
37.

Conference Proceedings
Conference Proceedings
37. GaN-Based and ZnO Nanorod Sensors for Wireless Hydrogen Leak Detection
Lin, J. ; El Kouche, A. ; Law, M.E. ; Ren, F. ; Kang, B.S. ; Pearton, S.J. ; Norton, D. ; Abernathy, C.R.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.449-460,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
38.

Conference Proceedings
Conference Proceedings
38. Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS
Gila, B.P. ; Lambers, E. ; Luo, B. ; Onstine, A.H. ; Allums, K.K. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
39.

Conference Proceedings
Conference Proceedings
39. Comparison of Digital versus Continuous Growth Techniques for MgCaO Dielectric on GaN
Onstine, A.H. ; Herrero, A. ; Gila, B.P. ; Stodilka, D. ; Abernathy, C.R. ; LaRoche, J. ; Ren, F. ; Pearton, S.J.
Pub. info.: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.353-358,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 811
40.

Conference Proceedings
Conference Proceedings
40. GaN pnp Bipolar Junction Transistors Operated To 250℃
Zhang, A.P. ; Dang, G. ; Ren, F. ; Han, J. ; Monier, C. ; Baca, A.G. ; Cao, X.A. ; Cho, H. ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.2-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
41.

Conference Proceedings
Conference Proceedings
41. Device Processing For GaN High Power Electronics
Pearton, Stephen J. ; Cao, X.A. ; Cho, H. ; Lee, K.P. ; Monier, C. ; Ren, F. ; Dang, G. ; Zhang, A.P. ; Johnson, W. ; LaRoche, J.R. ; Gila, B.P. ; Abernathy, C.R. ; Shul, R.J. ; Baca, A.G. ; Han, J. ; Chyi, J.-I. ; Van Hove, J.M.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.1-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
42.

Conference Proceedings
Conference Proceedings
42. Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy
Onstine, A.H. ; Gila, B.P. ; Kim, J. ; Stodilka, D. ; Allums, K. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.285-292,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
43.

Conference Proceedings
Conference Proceedings
43. Ohmic contacts on binary and ternary nitrides
Ren, F. ; Pearton, S.J. ; Donovan, S. ; Abernathy, C.R. ; Cole, M.W.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.122-128,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
44.

Conference Proceedings
Conference Proceedings
44. In-Situ Chemical Surface Treatments For The Removal of AIN/SiC Interfacial Contamination
Stodilka, D.O. ; Gila, B.P. ; Abernathy, C.R. ; Lambers, E. ; Ren, F. ; Pearton, S.I.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.350-354,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
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Title of ser.: Materials Research Society symposium proceedings
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46. Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
Stodilka, D.O. ; Gila, B.P. ; Abernathy, C.R. ; Lambers, E. ; Ren, F. ; Pearton, S.J.
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Title of ser.: Materials science forum
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47. Effect of Dry Etching in III-Nitride Surface Properties
Ren, F. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C.B. ; Karlicek, B. ; Karlicek, R.F., Jr. ; MacKenzie, J.D. ; Wilson, R.G.
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