1.

Conference Proceedings
Conference Proceedings
1. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
2.

Conference Proceedings
Conference Proceedings
2. GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Kim, Jihyun ; Kang, B.S. ; LaRoche, J.R. ; Ren, F ; Pan, C.-C. ; Chen, G.T. ; Chyi, J.-I. ; Park, S.S. ; Park, Y.J. ; Gila, B.P. ; Abernathy, C.R. ; Balk, K.H. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.306-320,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
4.

Conference Proceedings
Conference Proceedings
4. Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
Luo, B. ; Schoenfeld, D. ; Johnson, W.J. ; Pearton, S.J. ; Ren, F.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.250-257,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
5.

Conference Proceedings
Conference Proceedings
5. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
6.

Conference Proceedings
Conference Proceedings
6. p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs
Luo, B. ; Dang, G. ; Zhang, A.-P. ; Ren, F. ; Lopata, J. ; Chu, S.N.G. ; Hobson, W.S ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.232-240,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
7.

Conference Proceedings
Conference Proceedings
7. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
8.

Conference Proceedings
Conference Proceedings
8. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
9.

Conference Proceedings
Conference Proceedings
9. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
10.

Conference Proceedings
Conference Proceedings
10. DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Ren, F. ; Pan, C-C. ; Chen, G.-T. ; Chyi, J.I. ; Park, S.S. ; Park, Y.J. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.214-222,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
11.

Conference Proceedings
Conference Proceedings
11. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
Kim, J. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.653-658,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
12.

Conference Proceedings
Conference Proceedings
12. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.659-664,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
13.

Conference Proceedings
Conference Proceedings
13. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.335-340,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
14.

Conference Proceedings
Conference Proceedings
14. Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN
Kent, D. G. ; Lee, K.P. ; Zhang, A. P. ; Luo, B. ; Overberg, M.E. ; Abernathy, C. R. ; Ren, F. ; Mackenzie, K. D. ; Pearton, S.J. ; Nakagawa, Y.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
15.

Conference Proceedings
Conference Proceedings
15. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
16.

Conference Proceedings
Conference Proceedings
16. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
17.

Conference Proceedings
Conference Proceedings
17. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Kim, Jihyun ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.699-712,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
18.

Conference Proceedings
Conference Proceedings
18. Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS
Gila, B.P. ; Lambers, E. ; Luo, B. ; Onstine, A.H. ; Allums, K.K. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
19.

Conference Proceedings
Conference Proceedings
19. Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*
Dang, G. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.225-231,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3