1.

Conference Proceedings
Conference Proceedings
1. Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
Losee, P.A. ; Li, C.H. ; Kumar, R.J. ; Chow, T.P. ; Bhat, I.B. ; Gutmann, R.J. ; Stahlbush, R.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1363-1366,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Design and Implementation of RESURF MOSFETs in 4H-SiC
Banerjee, S. ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.715-718,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Non-Contact Characterization Of Recombination Processes In 4H-SiC
Matocha, Kevin ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T4.4-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
6.

Conference Proceedings
Conference Proceedings
6. Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Issacs-Smith, T. ; Williams, J. ; Jones, K.A. ; Lelis, A. ; Tipton, W. ; Scozzie, S. ; Agarwal, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1309-1312,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Gallium Nitride Power Device Design Tradeoffs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1531-1534,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J. ; Arnold, E. ; Alok, D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1041-1044,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
Wang, W. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1413-1416,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.757-760,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
11.

Conference Proceedings
Conference Proceedings
11. Gallium Nitride Power Device Design Tradeoffs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1531-1534,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1535-1538,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1633-1636,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
14.

Conference Proceedings
Conference Proceedings
14. Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1089-1092,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393