1.

Conference Proceedings
Conference Proceedings
1. Fabrication of p-n junctions in as-grown ZnMgO/ZnO films [5941-60]
Yang, H. S. ; Li, Y. ; Norton,. D. P. ; Pearton,. S. J. ; Jang, S. ; Ren, F. ; Boatner, L. A.
Pub. info.: Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA.  pp.59411P-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5941
2.

Conference Proceedings
Conference Proceedings
2. Growth of Scandium Magnesium Oxide on GaN
Onstine, A. H. ; Herrero, A. ; Gila, B. P. ; Kim, J. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.397-402,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
3.

Conference Proceedings
Conference Proceedings
3. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
4.

Conference Proceedings
Conference Proceedings
4. Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage
Zhang, A.P. ; Johnson, J.W. ; Ren, F. ; Han, J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Redwing, J.M. ; Lee, K.P. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.167-172,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
5.

Conference Proceedings
Conference Proceedings
5. High Performance Small Area Contact GaN/AlGaN HBTs
Lee, K.P. ; Zhang, A.P. ; Ren, F. ; Han, J. ; Hobson, W.S. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.161-166,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
6.

Conference Proceedings
Conference Proceedings
6. Surface Preparation and Oxide Growth for GaN MOSFETs*
Gila, B.P. ; Johnson, J.W. ; Lee, K.N. ; Krishnamoorthy, V. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.71-83,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
7.

Conference Proceedings
Conference Proceedings
7. Optical, Electrical, and Physical Characteristics of Ni/Au Metal Contacts to p-GaN for High Brightness LEDs
Alexander, W.B. ; Johnson, F. ; Gutierrez, D. ; Kidney, K. ; Ren, F. ; Zhang, A. ; Laroche, J.R. ; Holloway, P. ; Lin, B. ; Lambers, E.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.128-138,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
8.

Conference Proceedings
Conference Proceedings
8. Surface State Characterization Methods for Si02 on 4H-SiC
LaRoche, I.R. ; Kim, J. ; Johnson, J.W. ; Luo, B. ; Kang, B.S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S.I. ; Chung, G. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.282-291,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
9.

Conference Proceedings
Conference Proceedings
9. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
10.

Conference Proceedings
Conference Proceedings
10. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
11.

Conference Proceedings
Conference Proceedings
11. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
12.

Conference Proceedings
Conference Proceedings
12. Non-Crystallographic Wet Etching of Gallium Arsenide
Baca, A.G. ; Laroche, J.R. ; Chang, P.C. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.15-21,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
13.

Conference Proceedings
Conference Proceedings
13. Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers *
Hobson, W.S. ; Lopata, J. ; Chirovsky, L.M.F. ; Chu, S.N.G. ; Dang, G. ; Ren, F. ; Tayahi, M.B. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.265-272,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
14.

Conference Proceedings
Conference Proceedings
14. Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
Luo, B. ; Schoenfeld, D. ; Johnson, W.J. ; Pearton, S.J. ; Ren, F.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.250-257,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
15.

Conference Proceedings
Conference Proceedings
15. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
16.

Conference Proceedings
Conference Proceedings
16. p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs
Luo, B. ; Dang, G. ; Zhang, A.-P. ; Ren, F. ; Lopata, J. ; Chu, S.N.G. ; Hobson, W.S ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.232-240,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
17.

Conference Proceedings
Conference Proceedings
17. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
18.

Conference Proceedings
Conference Proceedings
18. Optimization of Magnetic GaMnN for Use in Photonic Devices*
Thaler, G.T. ; Overberg, M.E. ; Gila, B. ; Abernathy, R.Frazier.C.R. ; Pearton, S.I ; Kim, J. ; Ren, F. ; Lee, I.S. ; Lee, S.Y. ; Park, Y.D. ; Khim, Z.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.58-63,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
19.

Conference Proceedings
Conference Proceedings
19. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
20.

Conference Proceedings
Conference Proceedings
20. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Kim. J. ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo. B. ; Oristine, A. ; Abernathy, C.R. ; Prarton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.184-190,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
21.

Conference Proceedings
Conference Proceedings
21. III-N Based Dilute Magnetic Semiconductors for Spintronics Applications*
Park, Y.D. ; Lee, J.S. ; Lee, S.-Y. ; Khim, Z.G. ; Oh, E. ; Thaler, G.T. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Kim, J.-H ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.22-27,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
22.

Conference Proceedings
Conference Proceedings
22. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
23.

Conference Proceedings
Conference Proceedings
23. Formation and Thermal Stability of Ni/Wsi/Ti/Pt Composite Ohmic Contacts to n-SiC for High Power Device Applications
Cole, M.W. ; Joshi, P.C. ; Hubbard, C.W. ; Demaree, D.J. ; Wood, M.C. ; Ervin, M.H. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.90-102,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
24.

Conference Proceedings
Conference Proceedings
24. Device Technologies for Future Mobile Wireless Applications
Tsai, H.-S. ; Wang, Y.C. ; Kuo, J.M. ; Chen, Y.K. ; Ren, F. ; Lothian, J.R.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.58-65,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
25.

Conference Proceedings
Conference Proceedings
25. Low Dit Dielectric/GaN MOS Systems
Hong, M. ; Ng, H.M. ; Kwo, J. ; Kortan, A.R. ; Baillargeon, J.N. ; Chu, S.N.G. ; Mannaerts, J.P. ; Cho, A.Y. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.103-109,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
26.

Conference Proceedings
Conference Proceedings
26. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
27.

Conference Proceedings
Conference Proceedings
27. AIGaN Power Rectifiers *
Pearton, S.J. ; Kim, J. ; Ren, F. ; Baik, K ; Gila, B.P. ; Abernathy, C.R. ; Irokawa, Y. ; Chyi, J-I. ; Park, S.S. ; Park, Y.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.180-207,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
28.

Conference Proceedings
Conference Proceedings
28. Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML)
Aliberti, K. ; Ruff, W.C. ; Shen, H. ; Newman, P.G. ; Giza, M.M. ; Sarney, W. ; Stead, M.R. ; Dammann, J. ; Mehandru, R. ; Ren, F.
Pub. info.: Laser radar technology and applications IX : 13-15 April 2004, Oriando, Florida, USA.  pp.99-110,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5412
29.

Conference Proceedings
Conference Proceedings
29. DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Ren, F. ; Pan, C-C. ; Chen, G.-T. ; Chyi, J.I. ; Park, S.S. ; Park, Y.J. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.214-222,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
30.

Conference Proceedings
Conference Proceedings
30. Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
Chang, P.C. ; Li, N.Y. ; Laroche, J.R. ; Baca, A.G. ; Hou, H.Q. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.305-312,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
31.

Conference Proceedings
Conference Proceedings
31. GaAs MOSFET - Achievements and Challenges
Hong, M. ; Baillargeon, J.N. ; Kwo, J. ; Kortan, A.R. ; Mannaerts, J.P. ; Cho, A.Y. ; Wang, Y.C. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.292-304,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
32.

Conference Proceedings
Conference Proceedings
32. Charge and Spin-Based Electronics Using ZnO Thin Films
Norton, D.P. ; Heo, Y.W. ; Ivill, M. ; Li, Y. ; Kwon, Y.W. ; Erie, J. M. ; Jones, M. ; Holloway, P.H. ; Pearton, S. J. ; Ren, F. ; Park, Z. V. ; Li, S. ; Hebard, A. F. ; Kelly, J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.276-286,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
33.

Conference Proceedings
Conference Proceedings
33. Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN *
Thaler, G.T. ; Overberg, M. ; Frazier, R. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Park, Y.D. ; Rairigh, R. ; Kelly, J. ; Lee, J.S. ; Theodoropoulou, N. ; Hebard, A.F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.141-145,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
34.

Conference Proceedings
Conference Proceedings
34. AlN-based Dilute Magnetic Semiconductors
Frazier, R. ; Thaler, G. ; Gila, J. ; Stapleton, J. ; Overberg, M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.17-23,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
35.

Conference Proceedings
Conference Proceedings
35. Gaeless AlGaN/GaN HEMT Response to Block Co-Polymers
Kang, B. S. ; Louche, G. ; Duran, R S. ; Gnanou, Y. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.39-45,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
36.

Conference Proceedings
Conference Proceedings
36. Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment
Moser, N. ; Fitch, R. ; Via, D. ; Crespo, A. ; Yannuzzi, M. ; Jessen, G. ; Gillespie, J. ; Luo, B. ; Ren, F. ; Abernathy, C. ; Pearton, S. ; Gila, B.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.57-67,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
37.

Conference Proceedings
Conference Proceedings
37. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *
Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.293-299,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
38.

Conference Proceedings
Conference Proceedings
38. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition (Invited Paper) [6337-56]
Li, Y. ; Kim, H. -S. ; Erie, J. -M. ; Ren, F. ; Pearton, S. J. ; Norton, D. P.
Pub. info.: Sixth international conference on solid state lighting : 14-17 August 2006, San Diego, California, USA.  pp.633708-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6337
39.

Conference Proceedings
Conference Proceedings
39. W2B Based High Thermal Stability Ohmic Contacts to n-GaN
Khanna, Rohit ; Pearton, S. J. ; Kao, C. J. ; Kravchenko, I. ; Ren, F. ; Chi, G. C. ; Dabiran, A. ; Osinsky, A.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.341-350,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
40.

Conference Proceedings
Conference Proceedings
40. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
41.

Conference Proceedings
Conference Proceedings
41. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
42.

Conference Proceedings
Conference Proceedings
42. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
43.

Conference Proceedings
Conference Proceedings
43. *Properties and effects of hydrogen in GaN
Pearton, S. J. ; Cho, H. ; Ren, F. ; Chyi, J-I. ; Han, J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.6.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
44.

Conference Proceedings
Conference Proceedings
44. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
Kim, J. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.653-658,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
45.

Conference Proceedings
Conference Proceedings
45. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.659-664,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
46.

Conference Proceedings
Conference Proceedings
46. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.335-340,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
47.

Conference Proceedings
Conference Proceedings
47. Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN
Kent, D. G. ; Lee, K.P. ; Zhang, A. P. ; Luo, B. ; Overberg, M.E. ; Abernathy, C. R. ; Ren, F. ; Mackenzie, K. D. ; Pearton, S.J. ; Nakagawa, Y.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
48.

Conference Proceedings
Conference Proceedings
48. Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers
Aliberti, K. ; Shen, H. ; Stann, B. ; Mehandru, R. ; Ren, F.
Pub. info.: Laser radar technology and applications VIII : 22-25 April 2003, Oriando, Florida, USA.  pp.369-376,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5086
49.

Conference Proceedings
Conference Proceedings
49. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
50.

Conference Proceedings
Conference Proceedings
50. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693