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Conference Proceedings

1. Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Lukyanchikova, N. R. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.208-214, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

2. 1/f noise in deep-submicron CMOS technology for RF and analog applications (Invited Paper)

Mercha, A. ; Simoen, E. ; Decoutere, S. ; Claeys, C.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.193-207, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

3. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-924, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

4. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-926, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

5. Lifetime and Leakage Current Studies in Shallow P-N Junctions

Poyai, A. ; Simoen, E. ; Claeys, C. ; Rooyackers, R. ; Badenes, G. ; Gaubas, E.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.403-413, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

6. What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics?

Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.153-172, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

7. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Camillo, L.M. ; Martino, J.A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.119-124, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

8. 19 1/fNoise Performance of n-MOSFETs with Hf-Based Gate Dielectrics

Srinivasan, P. ; Simoen, E. ; Pantisano, L. ; Claeys, C. ; Misra, D.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.151-160, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

9. Impact of STI Width and Spacing on the Stress Generation in Deep Submicron CMOS

Poyai, A. ; Rittaporn, I. ; Simoen, E. ; Claeys, C. ; Rooyackers, R.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.307-316, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

10.

Conference Proceedings

10. Effective Lifetime of Minority Carriers in Silicon: the Role of Heat- and Hydrogen Plasma Treatments

Ulyashin, A. ; Simoen, E. ; Camel, L. ; De Wolf, S. ; Dekkers, H. ; Rafi, J.M. ; Beaucarne, G. ; Poortmans, J. ; Claeys, C.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.334-345, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

11.

Conference Proceedings

11. Oxygen Precipitation and Thermal Donor Formation in Pb and C-Doped n-type Czochralski Silicon

Neimash, M.V. ; Kras'ko, M. ; Kraitchinskii, A, ; Voytovych, V. ; Kabaldin, O. ; Tsmots, V. ; Simoen, E. ; Claeys, C.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.286-294, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

12.

Conference Proceedings

12. Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

Martino, J.A. ; Rafi, J.M. ; Mercha, A. ; Simoen, E. ; Claeys, C.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.346-356, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

13.

Conference Proceedings

13. Tin Doping Effects in Silicon*

Simoen, E. ; Claeys, C. ; Neimash, V.B. ; Kraitchinskii, A. ; Kras'ko, M. ; Puzenko, O. ; Blondeel, A. ; Clauws, P.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.223-235, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

14.

Conference Proceedings

14. Degradation of Deep Submicron Partially Depleted SOI CMOS iransistors tinder MEV Proton or Gamma Irradiation

Simoen, E. ; Rafi, J.M. ; Mercha, A. ; De Meyer, K. ; Claeys, C. ; Kokkoris, M. ; Kossionides, E. ; Fanourakis, G. ; Mohhaindzadeh, A.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium. pp.18-27, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-9

15.

Conference Proceedings

15. Radiation-Induced Deep Levels in Lead- and Tin-Doped n-Type Czochralski Silicon

David, M.-L. ; Simoen, E. ; Claeys, C. ; Neimash, V. ; Kras'ko, M. ; Kraitchinski, A. ; Voytovuch, V. ; Tishcenko, V. ; Barbot, J.F.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.395-406, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

16.

Conference Proceedings

16. Radiation characteristics of short p-channel MOSFETs on SOI substrates

Evtukh, A. ; Kizjak, A. ; Litovchenko, V. ; Claeys, C. ; Simoen, E.

Pub. info.:	Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment. pp.221-226, 2005. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	185

17.

Conference Proceedings

17. Defect Behavior and Control in Advanced CMOS Process Technologies

Claeys, C. ; Simoen, E.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.50-65, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-01

18.

Conference Proceedings

18. Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications?

Job, R. ; Ulyashin, A.G. ; Huang, Y.L. ; Fahrner, W.R. ; Simoen, E. ; Claeys, C. ; Niedernostheide, F.-J. ; Schulze, H.-J. ; Tonelli, G.

Pub. info.:	Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.257-262, 2002. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	719

19.

Conference Proceedings

19. Noise Diagnostics for Advanced Silicon Substrates and Deep Submicron Process Modules

Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. pp.420-439, 2003. Pennington, NJ. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5133

20.

Conference Proceedings

20. Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon

Rafi, J.M. ; Simoen, E. ; Claeys, C. ; Ulyashin, A. ; Job, R. ; Fahrner, W. ; Versluys, J. ; Clauws, P. ; Lozano, M. ; Campabadal, F.

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. pp.96-105, 2003. Pennington, NJ. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5133

21.

Conference Proceedings

21. Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs

Agopian, P. G. ; Martino, J. A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.512-519, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

22.

Conference Proceedings

22. Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs

Galeti, M. ; Martino, J. A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.538-547, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

23.

Conference Proceedings

23. Floating Body/Floating Well Effects in Deep Submicron MOSFETs at Liquid Nitrogen Temperature

Simoen, E. ; Hayama, K. ; Takakura, K. ; Mercha, A. ; Claeys, C. ; Ohyama, H.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.455-463, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

24.

Conference Proceedings

24. P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal

Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Simons, V. ; Loo, R. ; Caymax, M. ; De Meyer, K. ; Vandervorst, W. ; Claeys, C.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.338-348, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-06

25.

Conference Proceedings

25. The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement?

Simoen, E. ; Eneman, G. ; Verheyen, P. ; Delhougne, R. ; Rooyackers, R. ; Loo, R. ; Vandervorst, W. ; De Meyer, K. ; Claeys, C.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.349-359, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-06

26.

Conference Proceedings

26. Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon

Simoen, E. ; Huang, Y. L. ; Claeys, C. ; Raft, J. M. ; Job, R. ; Fahrner, W. R. ; Versluys, J. ; Clauws, P.

Pub. info.:	Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France. pp.165-175, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-10

27.

Conference Proceedings

27. Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures

Pavanello, M.A. ; Martino, J.A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.289-294, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

28.

Conference Proceedings

28. Defect Engineering in High-Mobility Substrates for Advanced CMOS Technologies (Invited)

Claeys, C. ; Simoen, E.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.73-89, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

29.

Conference Proceedings

29. Influence of γ-radiation on short channel SOI-MOSFETs with thin SiO2films

Claeys, C. ; Simoen, E. ; Litovchenko, V.G. ; Evtukh, A. ; Efremov, A. ; Kizjak, A. ; Rassamakin, Ju.

Pub. info.:	Progress in SOI structures and devices operating at extreme conditions. pp.211-220, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	58

30.

Conference Proceedings

30. Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis

Poyai, A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. pp.386-395, 2003. Pennington, NJ. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5133

31.

Conference Proceedings

31. Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K

Pavanello, M. A. ; Martino, J. A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium. pp.464-471, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-08

32.

Conference Proceedings

32. Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures

Pavanello, M. A. ; Martino, J. A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2004 : proceedings of the nineteenth international symposium. pp.21-26, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-03

33.

Conference Proceedings

33. Radiation damage in deep submicron partially depleted SOI CMOS

Simoen, E. ; Rafi, J.M. ; Mercha, A. ; Serra-Gallifa, X. ; van Meer, H. ; De Meyer, K. ; Claeys, C. ; Kokkoris, M. ; Kossionides, E. ; Fanourakis, G.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.437-442, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

34.

Conference Proceedings

34. The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

Nicolett, A.S. ; Martino, J.A. ; Simoen, F. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium. pp.28-34, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-8

35.

Conference Proceedings

35. Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology

Poyai, A. ; Simoen, E. ; Claeys, C. ; Rooyackers, R. ; Redolfi, A.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium. pp.213-222, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-8

36.

Conference Proceedings

36. Comparison Between 0.13 μm Partially-Depleted Silicon-On-Insulator Technology with Floating Body Operation at 300 K and 90 K

Pavanello, M.A. ; Martino, J.A. ; Mercha, A. ; Rafi, J.M. ; Simoen, E. ; Claeys, C. ; van Meer, H. ; De Meyer, K.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium. pp.205-212, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-8

37.

Conference Proceedings

37. Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis

Poyai, A. ; Sitnoen, E. ; Claeys, C.

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. pp.386-395, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-3

38.

Conference Proceedings

38. Back-gate induced noise overshoot in partially-depleted SOI MOSFETs

Lukyanchikova, N. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment. pp.255-260, 2005. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	185

39.

Conference Proceedings

39. A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures

Pavanello, M.A. ; Martino, J.A. ; Simoen, E. ; Mercha, A. ; Claeys, C. ; Dc Meyer, K.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium. pp.112-119, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-9

40.

Conference Proceedings

40. Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon

Raft, J.M. ; Simoen, E. ; Claeys, C. ; Ulyashin, A. ; Job, R. ; Fahrner, W. ; Versluys, J. ; Clauws, P. ; Lozano, M ; Campabadal, F.

Pub. info.:	Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. pp.96-105, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-3

41.

Conference Proceedings

41. IMPACT OF STATE-OF-THE-ART Cz SUBSTRATES ON THE CURRENT-VOLTAGE CHARACTERSTiCS OF SHALLOW p-n JUNCTIONS

Poyai, A. ; Simoen, E. ; Claeys, C. ; Huber, A. ; Graef, D. ; Gaubas, E.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.694-706, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

42.

Conference Proceedings

42. Influence Of Mechanical Stress On The Electrical Performance Of Polycrystalline-Silicon Resistors

Claeys, C. ; Ikegami, M. ; Kobayashi, K. ; Nakabayashi, M. ; Ohyama, H. ; Simoen, E. ; Sunaga, H. ; Takami, Y. ; Takizawa, H. ; Yoneoka, M.

Pub. info.:	Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.. pp.A29.3-, 2001. Warrendale. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	609

43.

Conference Proceedings

43. Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs

Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Advanced experimental methods for noise research in nanoscale electronic devices. pp.121-128, 2004. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	151

44.

Conference Proceedings

44. Diode Analysis of Deep Submicron CMOS P-Well Implantation Damage

Poyai, A. ; Simoen, E. ; Claeys, C. ; Rooyackers, R.

Pub. info.:	High purity silicon VII : proceedings of the international symposium. pp.266-277, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-20

45.

Conference Proceedings

45. P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

Huang, Y.L. ; Simoen, E. ; Job, R. ; Claeys, C. ; Dungen, W. ; Ma, Y. ; Fahrner, W.R. ; Versluys, J. ; Clauws, P.

Pub. info.:	Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.. pp.307-312, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	864

46.

Conference Proceedings

46. Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K

Nicolett, A.S. ; Martino, J.A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium. pp.430-436, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-8

47.

Conference Proceedings

47. Low temperature Doping of Silicon by Hydrogen Plasma Treatments*

Job, R. ; Ulyashin, A.G. ; Ma, Y. ; Fahnwr, W.R. ; Simoen, E. ; Rafi, J.M. ; Claeys, C. ; Niedernostheide, F.J. ; Schulze, H.J.

Pub. info.:	High purity silicon VII : proceedings of the international symposium. pp.141-154, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-20

48.

Conference Proceedings

48. Noise and Tunneling Through the 2.5 nm Gate Oxide in SOI MOSFETs

Lukyanchikova, N. ; Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Advanced experimental methods for noise research in nanoscale electronic devices. pp.129-136, 2004. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	151

49.

Conference Proceedings

49. Chemical and Structural Characterization of Oxide Precipitates in Heavily Boron Doped Silicon by Infrared Spectroscopy and Transmission Electron Microscopy

Gryse, O. De ; Clauws, P. ; Vanhellemont, J. ; Lebedev, O. ; Van Landuyt, J. ; Simoen, E. ; Claeys, C.

Pub. info.:	High purity silicon VII : proceedings of the international symposium. pp.183-196, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-20

50.

Conference Proceedings

50. The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies

Simoen, E. ; Claeys, C. ; Poyai, A.

Pub. info.:	Crystalline defects and contamination: their impact and control in device manufacturing III : DECON 2001 : proceedings of the Satellite Symposium to ESSDERC 2001, Nuremberg, Germany. pp.75-92, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-29

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