1.

Conference Proceedings
Conference Proceedings
1. Surface Preparation and Oxide Growth for GaN MOSFETs*
Gila, B.P. ; Johnson, J.W. ; Lee, K.N. ; Krishnamoorthy, V. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.71-83,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
2.

Conference Proceedings
Conference Proceedings
2. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
4.

Conference Proceedings
Conference Proceedings
4. GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Kim, Jihyun ; Kang, B.S. ; LaRoche, J.R. ; Ren, F ; Pan, C.-C. ; Chen, G.T. ; Chyi, J.-I. ; Park, S.S. ; Park, Y.J. ; Gila, B.P. ; Abernathy, C.R. ; Balk, K.H. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.306-320,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
5.

Conference Proceedings
Conference Proceedings
5. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
6.

Conference Proceedings
Conference Proceedings
6. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
7.

Conference Proceedings
Conference Proceedings
7. Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors *
Hsu, C.H. ; Chen, C.C. ; Ren, B.Luo.F. ; Pearton, S.J. ; Abernathy, C.R. ; Lee, J.W. ; Mackenzie, K.D. ; Sasserath, J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.241-249,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
8.

Conference Proceedings
Conference Proceedings
8. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
9.

Conference Proceedings
Conference Proceedings
9. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
10.

Conference Proceedings
Conference Proceedings
10. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
11.

Conference Proceedings
Conference Proceedings
11. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Kim. J. ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo. B. ; Oristine, A. ; Abernathy, C.R. ; Prarton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.184-190,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
12.

Conference Proceedings
Conference Proceedings
12. III-N Based Dilute Magnetic Semiconductors for Spintronics Applications*
Park, Y.D. ; Lee, J.S. ; Lee, S.-Y. ; Khim, Z.G. ; Oh, E. ; Thaler, G.T. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Kim, J.-H ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.22-27,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
13.

Conference Proceedings
Conference Proceedings
13. Low Dit Dielectric/GaN MOS Systems
Hong, M. ; Ng, H.M. ; Kwo, J. ; Kortan, A.R. ; Baillargeon, J.N. ; Chu, S.N.G. ; Mannaerts, J.P. ; Cho, A.Y. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.103-109,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
14.

Conference Proceedings
Conference Proceedings
14. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
15.

Conference Proceedings
Conference Proceedings
15. AIGaN Power Rectifiers *
Pearton, S.J. ; Kim, J. ; Ren, F. ; Baik, K ; Gila, B.P. ; Abernathy, C.R. ; Irokawa, Y. ; Chyi, J-I. ; Park, S.S. ; Park, Y.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.180-207,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
16.

Conference Proceedings
Conference Proceedings
16. Anomalous Hall Effect in Wide Bandgap Diluted Magnetic Semiconductors Co-Doped With Non-Magnetic Impurities
Park, Y.D. ; Choi, H.K. ; Shim, S.B. ; Suh, K.S. ; Seo, S.S.A. ; Noh, T. W. ; SKim, Y. ; Lee, J.S. ; Khim, Z.G. ; Abernathy, C.R. ; Pearton, S.J. ; Zavada, J.M.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.300-311,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
17.

Conference Proceedings
Conference Proceedings
17. Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN *
Thaler, G.T. ; Overberg, M. ; Frazier, R. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Park, Y.D. ; Rairigh, R. ; Kelly, J. ; Lee, J.S. ; Theodoropoulou, N. ; Hebard, A.F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.141-145,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
18.

Conference Proceedings
Conference Proceedings
18. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
19.

Conference Proceedings
Conference Proceedings
19. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
20.

Conference Proceedings
Conference Proceedings
20. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Kim, Jihyun ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.699-712,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
21.

Conference Proceedings
Conference Proceedings
21. Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
Gila, B. ; Onstine, A.H. ; Hlad, M ; Gerger, A. ; Herrero, A. ; Allums, K.K. ; Stodilka, D. ; Jang, S. ; Kang, S. ; Anderson, T. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.247-261,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
22.

Conference Proceedings
Conference Proceedings
22. GaN-Based and ZnO Nanorod Sensors for Wireless Hydrogen Leak Detection
Lin, J. ; El Kouche, A. ; Law, M.E. ; Ren, F. ; Kang, B.S. ; Pearton, S.J. ; Norton, D. ; Abernathy, C.R.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.449-460,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
23.

Conference Proceedings
Conference Proceedings
23. Ferromagnetic and Structural Properties of Mn-Implanted p-GaN
Theodoropoulou, N. ; Hebard, A.F. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Chu, S.N.G. ; Wilson, R.G.
Pub. info.: Applications of ferromagnetic and optical materials, storage and magnetoelectronics : symposia held April 16-20, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 674
24.

Conference Proceedings
Conference Proceedings
24. Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS
Gila, B.P. ; Lambers, E. ; Luo, B. ; Onstine, A.H. ; Allums, K.K. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
25.

Conference Proceedings
Conference Proceedings
25. Comparison of Digital versus Continuous Growth Techniques for MgCaO Dielectric on GaN
Onstine, A.H. ; Herrero, A. ; Gila, B.P. ; Stodilka, D. ; Abernathy, C.R. ; LaRoche, J. ; Ren, F. ; Pearton, S.J.
Pub. info.: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.353-358,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 811
26.

Conference Proceedings
Conference Proceedings
26. GaN pnp Bipolar Junction Transistors Operated To 250℃
Zhang, A.P. ; Dang, G. ; Ren, F. ; Han, J. ; Monier, C. ; Baca, A.G. ; Cao, X.A. ; Cho, H. ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.2-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
27.

Conference Proceedings
Conference Proceedings
27. Device Processing For GaN High Power Electronics
Pearton, Stephen J. ; Cao, X.A. ; Cho, H. ; Lee, K.P. ; Monier, C. ; Ren, F. ; Dang, G. ; Zhang, A.P. ; Johnson, W. ; LaRoche, J.R. ; Gila, B.P. ; Abernathy, C.R. ; Shul, R.J. ; Baca, A.G. ; Han, J. ; Chyi, J.-I. ; Van Hove, J.M.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.1-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
28.

Conference Proceedings
Conference Proceedings
28. Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy
Onstine, A.H. ; Gila, B.P. ; Kim, J. ; Stodilka, D. ; Allums, K. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.285-292,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
29.

Conference Proceedings
Conference Proceedings
29. Optimization of GaMnN Growth Conditions for Novel Spintronic Applications
Thaler, G.T. ; Frazier, R.M. ; Abernathy, C.R. ; Pearton, S.J. ; Rairaigh, R. ; Kelly, J. ; Hebard, A.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.338-343,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
30.

Conference Proceedings
Conference Proceedings
30. Synthesis and Characterization of Ferromagnetic AIN and AIGaN Layers
Frazier, R.M. ; Thaler, G.T. ; Abernathy, C.R. ; Pearton, S.J. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X. ; Rairigh, R. ; Kelly, I. ; Hebard, A.F. ; Zavada, J.M. ; Wilson, R.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.384-389,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
31.

Conference Proceedings
Conference Proceedings
31. In-Situ Chemical Surface Treatments For The Removal of AIN/SiC Interfacial Contamination
Stodilka, D.O. ; Gila, B.P. ; Abernathy, C.R. ; Lambers, E. ; Ren, F. ; Pearton, S.I.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.350-354,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
32.

Conference Proceedings
Conference Proceedings
32. Growth of MgCaO on GaN
Onstine, A.H. ; Gila, B.P. ; Kim, J. ; Herrero, A. ; Mehandru, R. ; Abernathy, C.R. ; Ren, B.F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.344-349,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
33.

Conference Proceedings
Conference Proceedings
33. Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications
Zavada, J.M. ; Frazier, R.M. ; Abernathy, C.R. ; Pearton, S.J. ; Kelly, J. ; Rairigh, R. ; Hebard, A.F. ; Lin, I.Y. ; Jiang, H.X.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.327-337,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
34.

Conference Proceedings
Conference Proceedings
34. Insulator/GaN Heterostructures Of Low Interfacial Density Of States
Hong, Minghwei ; Ng, Hock M. ; Kwo, J. ; Kortan, A. Refik ; Baillargeon, Jim N. ; Anselm, K. Alex ; Mannaerts, Joe P. ; Cho, Alfred Y. ; Lee, C.M. ; Chyi, Jen Inn ; Lay, T. Sheng ; Ren, F. ; Abernathy, C.R. ; Pearton, Stephen J.
Pub. info.: Wide-bandgap electronic devices.  pp.T2.2-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
35.

Conference Proceedings
Conference Proceedings
35. Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
Stodilka, D.O. ; Gila, B.P. ; Abernathy, C.R. ; Lambers, E. ; Ren, F. ; Pearton, S.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1377-1380,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460