1.

Conference Proceedings
Conference Proceedings
1. Analysis of Junctions Formed in Strained Si/SiGe Substrates
Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.187-192,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
4.

Conference Proceedings
Conference Proceedings
4. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
5.

Conference Proceedings
Conference Proceedings
5. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.415-422,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
6.

Conference Proceedings
Conference Proceedings
6. In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques
Loo, R. ; Meunier-Beillard, P. ; Delhougne, R. ; Koumoto, T. ; Geenen, L. ; Brijs, B. ; Vandervorst, W.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.329-338,  2003.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5133
7.

Conference Proceedings
Conference Proceedings
7. P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Simons, V. ; Loo, R. ; Caymax, M. ; De Meyer, K. ; Vandervorst, W. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.338-348,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
8.

Conference Proceedings
Conference Proceedings
8. The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement?
Simoen, E. ; Eneman, G. ; Verheyen, P. ; Delhougne, R. ; Rooyackers, R. ; Loo, R. ; Vandervorst, W. ; De Meyer, K. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.349-359,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
9.

Conference Proceedings
Conference Proceedings
9. N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Ries, M. ; Loo, R. ; Caymax, M. ; Vandervorst, W. ; De Meyer, K.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.119-124,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
10.

Conference Proceedings
Conference Proceedings
10. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809