1.

Conference Proceedings
Conference Proceedings
1. Analysis of Junctions Formed in Strained Si/SiGe Substrates
Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.187-192,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
4.

Conference Proceedings
Conference Proceedings
4. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
5.

Conference Proceedings
Conference Proceedings
5. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
6.

Conference Proceedings
Conference Proceedings
6. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
7.

Conference Proceedings
Conference Proceedings
7. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.415-422,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
8.

Conference Proceedings
Conference Proceedings
8. 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
De Gendt, S. ; Brunco, D. ; Caymax, M. ; Canard, T. ; Date, L. ; Delabie, A. ; Deweerd, W. ; Groeseneken, G. ; Houssa, M. ; Hyun, S. ; Kaushik, V. ; Kubicek, S. ; Maes, J. ; Pantisano, L. ; Ragnarsson, L. ; Rohr, E. ; Schram, T. ; Shimamoto, Y. ; Sleeckx, E. ; Vandervorst, W. ; Van Elshocht, S. ; Yamamoto, K. ; Witters, T. ; Zhao, C. ; Zimmerman, P. ; Heyns, M. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.109-117,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
9.

Conference Proceedings
Conference Proceedings
9. P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Simons, V. ; Loo, R. ; Caymax, M. ; De Meyer, K. ; Vandervorst, W. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.338-348,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
10.

Conference Proceedings
Conference Proceedings
10. ION IMPLANTATION OF HIGH DOSES OF Co IN Si1-xGex ALLOYS
Lauwers, A. ; Maex, K. ; Vandervorst, W. ; Brijs, G. ; Poortmans, J. ; Caymax, M. ; Vanhellemont, J. ; Petersson, S.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.299-304,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
11.

Conference Proceedings
Conference Proceedings
11. Physcial Characterization of Ultrathin High-k Dielectrics
Vandervorst, W. ; Brijs, B. ; Bender, H. ; Conard, O.T. ; Petry, J. ; Richard, O. ; Elshocht, S.Van ; Delabie, A. ; Caymax, M. ; Gendt, S.De
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.23-34,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
12.

Conference Proceedings
Conference Proceedings
12. Thermal Stability of High-k Layers
Zhao, C. ; Cosnier, V. ; Chen, P.J. ; Richard, O. ; Roebben, G. ; Maes, J. ; Elshocht, S.Van ; Bender, H. ; Young, E. ; Biest, O.Van Der ; Caymax, M. ; Vandervorst, W. ; Gendt, S.De ; Heyns, M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.9-14,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
13.

Conference Proceedings
Conference Proceedings
13. Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon
Elshocht, S.Van ; Caymax, M. ; Gendt, S.De ; Conard, T. ; Petry, J. ; Claes, M. ; Witters, T. ; Zhao, C. ; Brijs, B. ; Richard, O. ; Bender, H. ; Vandervorst, W. ; Carter, R. ; Kluth, J. ; Date, L. ; Pique, D. ; Heyns, M.M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.197-202,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
14.

Conference Proceedings
Conference Proceedings
14. N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Ries, M. ; Loo, R. ; Caymax, M. ; Vandervorst, W. ; De Meyer, K.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.119-124,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
15.

Conference Proceedings
Conference Proceedings
15. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
16.

Conference Proceedings
Conference Proceedings
16. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
17.

Conference Proceedings
Conference Proceedings
17. ALD HfO2 Surface Preparation Study
Delabie, Annelies ; Caymax, M. ; Maes, J.W. ; Bajolet, P. ; Brijs, B. ; Cartier, E. ; Conard, T. ; Gendt, S.De ; Richard, O. ; Vandervorst, W. ; Zhao, C. ; Green, M. ; Tsai, W. ; Heyns, M.M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.179-184,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
18.

Conference Proceedings
Conference Proceedings
18. Nanometer-scale roughness analysis of Si surfaces by TM-AFM for low-temperature epitaxy
Chollet, F. ; Caymax, M. ; Vandervorst, W. ; Andre, E.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.263-270,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30