1.

Conference Proceedings
Conference Proceedings
1. SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique
Oyanagi, N. ; Nishizawa, S. ; Kato, T. ; Yamaguchi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.75-78,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Takano, Y. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.457-460,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. X-Ray Topographic Study of SiC Crystal at High Temperature
Yamaguchi, H. ; Oyanagi, Na. ; Kato, T. ; Takano, Y. ; Nishizawa, S. ; Bahng, W. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.461-464,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Flux-Controlled Sublimation Growth by an Inner Guide-Tube
Kitou, Y. ; Bahng, W. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.83-86,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
Nishizawa, S. ; Kato, T. ; Kitou, Y. ; Oyanagi, N. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.43-46,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Oyanagi, N. ; Yamaguchi, H. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.87-90,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Kato, T. ; Oyanagi, N. ; Kitou, Y. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.111-114,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Hirose, F. ; Kitou, Y. ; Oyanagi, N. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.75-78,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.295-298,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Oyanagi, N. ; Yamaguchi, H. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.87-90,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Flux-Controlled Sublimation Growth by an Inner Guide-Tube
Kitou, Y. ; Bahng, W. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.83-86,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Hirose, F. ; Kitou, Y. ; Oyanagi, N. ; Kato, T. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.75-78,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Kato, T. ; Oyanagi, N. ; Kitou, Y. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.111-114,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
Nishizawa, S. ; Kato, T. ; Kitou, Y. ; Oyanagi, N. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.43-46,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Large Diameter and Long Length Growth of SiC Single Crystal
Kato, T. ; Ohno, T. ; Hirose, F. ; Oyanagi, N. ; Nishizawa, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.99-102,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460