1.

Conference Proceedings
Conference Proceedings
1. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Arai, K. ; Kimura, K. ; Nakamura, K. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.211-214,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Development of Wide Range EIS Capacitor pH Sensor Using Corrosion Resistant Al2O3-Ta2O5 and Al2O3-ZrO2 Thin Films as Insulator Layers
Sugimoto, K. ; Yoshida, S. ; Akao, N. ; Hara, N.
Pub. info.: Corrosion and corrosion protection : proceedings of the international symposium.  pp.714-721,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-22
3.

Conference Proceedings
Conference Proceedings
3. Monolithic dual-wavelength lasers for CD-R/ DVD ± RW/R/RAM
Uchida, S. ; Hoshi, N. ; Agatsuma, S. ; Tanno, K. ; Iki, H. ; Yoshida, S. ; Kumasawa, F. ; Sahara, K. ; Nagasaki, H. ; Yamamoto, T.
Pub. info.: Optical data storage 2004 : 18-21 April 2004, Monterey, California, USA.  pp.417-421,  2004.  Bellingham.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5380
4.

Conference Proceedings
Conference Proceedings
4. Development and observation results of the Earth observation system for stratospheric plafform [5978-10]
Okamura, Y. ; Imai, H. ; Kasahara, M. ; Yoshida, S. ; Tange, Y.
Pub. info.: Sensors, systems, and next-generation satellites IX : 20-22 September 2005, Bruges, Belgium.  pp.59780A-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5978
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Oxide Films on SiC Epitaxial (0001) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Takata, Y. ; Kobayashi, K. ; Shin, S. ; Nohira, H. ; Hattori, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.585-588,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Takata, Y. ; Kobayashi, K. ; Nohira, H. ; Hattori T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1003-1006,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
Kakubari, K. ; Kuboki, R. ; Hijikata, Y. ; Yaguchi, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1031-1034,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Visualization of yielding phenomena on carbon steel under tensile loading by speckle pattern interferometry
Gomi, K. ; Funamoto, Y. ; Yoshida, S. ; Gabiria, A. ; Ichinose, K. ; Taniuchi, K.
Pub. info.: Speckle metrology 2003 : 18-20 June 2003, Trondheim, Norway.  pp.194-199,  2003.  Bellingham, Wash.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4933
9.

Conference Proceedings
Conference Proceedings
9. Coimplantation Effects of (C and Si)/Ga in 6H-SiC
Tanaka, Y. ; Kobayashi, N. ; Hasegawa, M. ; Ogura, M. ; Ishida, Y. ; Yoshida, S. ; Okumura, H. ; Tanoue, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.917-920,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. Role of arsenic hexagonal growth-suppression on a cubic GaNAs growth using metalorganic chemical vapor deposition
Yoshida, S. ; Kimura, T. ; Wu, J. ; Kikawa, J. ; Onabe, K. ; Shiraki, Y.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.41.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
11.

Conference Proceedings
Conference Proceedings
11. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
Yaguchi, H. ; Narita, K. ; Hijikata, Y. ; Yoshida, S. ; Nakashima, S. ; Oyanagi, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.621-624,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
Hijikata, Y. ; Yaguchi, H. ; Ishida, Y. ; Yoshikawa, M. ; Kamiya, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1341-1344,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
14.

Conference Proceedings
Conference Proceedings
14. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1033-1036,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Development of the WAMS-VNIR instrument for SPF-II
Matsuyama, H. ; Okamura, Y. ; Kasahara, M. ; Yoshida, S. ; Tange, Y.
Pub. info.: Enabling sensor and platform technologies for spaceborne remote sensing : 9-10 November 2004, Honolulu, Hawaii, USA.  pp.115-125,  2005.  Asia-Pacific Environmental Remote Sensing.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5659
19.

Conference Proceedings
Conference Proceedings
19. Development of the WAMS-TIR instrument for SPF-II
Okamura, Y. ; Matsuyama, H. ; Kasahara, M. ; Yoshida, S. ; Tange, Y.
Pub. info.: Enabling sensor and platform technologies for spaceborne remote sensing : 9-10 November 2004, Honolulu, Hawaii, USA.  pp.105-114,  2005.  Asia-Pacific Environmental Remote Sensing.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5659
20.

Conference Proceedings
Conference Proceedings
20. VIS-NIR and TIR sensors for Stratospheric Platform-II
Yoshida, S. ; Matsuyama, H. ; Okamura, Y. ; Tomii, N. ; Tange, Y. ; Moriyama, M. ; Ogata, Y.
Pub. info.: Multispectral and hyperspectral remote sensing instruments and applicaionts :25-27 October 2002, Hangzhou, China.  pp.51-56,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4897
21.

Conference Proceedings
Conference Proceedings
21. Design and preliminary performance evaluation of airborne hyperspectral imaging spectograph Air-OPUS
Okumura, S. ; Suzuki, M. ; Yoshida, S. ; Sano, Y. ; Watanabe, M. ; Ogawa, T.
Pub. info.: Multispectral and hyperspectral remote sensing instruments and applicaionts :25-27 October 2002, Hangzhou, China.  pp.36-43,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4897
22.

Conference Proceedings
Conference Proceedings
22. Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
Fukuda, K. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Nagai, K. ; Sekigawa, T. ; Okushi, H. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1283-1286,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
23.

Conference Proceedings
Conference Proceedings
23. Effect of Post-Oxidation-Annealing in Hydrogen on SiO2/4H-SiC Interface
Suzuki, S. ; Fukuda, K. ; Okushi, H. ; Nagai, K. ; Sekigawa, T. ; Yoshida, S. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1073-1076,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
24.

Conference Proceedings
Conference Proceedings
24. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.169-172,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
25.

Conference Proceedings
Conference Proceedings
25. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1037-1040,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
26.

Conference Proceedings
Conference Proceedings
26. Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1235-1238,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
27.

Conference Proceedings
Conference Proceedings
27. The Properties of a P-Implanted GaN Light-Emitting Diode
Kikawa, J. ; Yoshida, S. ; Itoh, Y.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.423-426,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
28.

Conference Proceedings
Conference Proceedings
28. Observation of Cubic GaN/AIN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy
Okumura, H. ; Koizumi, T. ; Ishida, Y. ; Cho, S. -H. ; Shen, X. -Q. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1545-1548,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
29.

Conference Proceedings
Conference Proceedings
29. The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Sekigawa, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.253-256,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
30.

Conference Proceedings
Conference Proceedings
30. X-Ray Topographic Study of SiC Crystal at High Temperature
Yamaguchi, H. ; Oyanagi, Na. ; Kato, T. ; Takano, Y. ; Nishizawa, S. ; Bahng, W. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.461-464,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
31.

Conference Proceedings
Conference Proceedings
31. Electrical and Structural Properties of Al and B Implanted 4H-SiC
Tanaka, Y. ; Kobayashi, N. ; Okumura, H. ; Suzuki, R. ; Ohdaira, T. ; Hasegawa, M. ; Ogura, M. ; Yoshida, S. ; Tanoue, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.909-912,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
32.

Conference Proceedings
Conference Proceedings
32. Thermal Modelling of the Lunar-A Penetrator and its Effects on the Accuracy for Lunar Heat Flow Experiment,
Tanaka, S. ; Yoshida, S. ; Hayakawa, M. ; Fujimura, A. ; Mizutani, H.
Pub. info.: Proceedings of the fourth International Conference on Exploration and Utilisation of the Moon, ICEUM 4, 10-14 July 2000, ESTEC, Noordwijk, the Netherlands.  pp.187-190,  2000.  Noordwijk, The Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 462
33.

Conference Proceedings
Conference Proceedings
33. Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
Tomioka, Y. ; Iida, T. ; Midorikawa, M. ; Tukada, H. ; Yoshimoto, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Ishida, Y. ; Kosugi, R. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1029-1032,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
34.

Conference Proceedings
Conference Proceedings
34. LUNAR-A Mission: Science Objectives and Instruments
Mizutani, H. ; Fujimura, A. ; Hayakawa, M. ; Tanaka, S. ; Shiraishi, H. ; Yoshida, S.
Pub. info.: Proceedings of the fourth International Conference on Exploration and Utilisation of the Moon, ICEUM 4, 10-14 July 2000, ESTEC, Noordwijk, the Netherlands.  pp.107-114,  2000.  Noordwijk, The Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 462
35.

Conference Proceedings
Conference Proceedings
35. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
36.

Conference Proceedings
Conference Proceedings
36. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
Yoshida, S. ; Ishii, H. ; Li, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1527-1530,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
Ishida, Y. ; Takahashi, T. ; Okumura, H. ; Jikimoto, T. ; Tsuchida, H. ; Yoshikawa, M. ; Tomioka, Y. ; Midorikawa, M. ; Hijikata, Y. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1013-1016,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
41.

Conference Proceedings
Conference Proceedings
41. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1053-1056,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
43.

Conference Proceedings
Conference Proceedings
43. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.275-278,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
44.

Conference Proceedings
Conference Proceedings
44. X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
Hijikata, Y. ; Yaguchi, H. ; Yoshikawa, M. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1033-1036,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
45.

Conference Proceedings
Conference Proceedings
45. High-temperature reliability of GaN electronic devices
Yoshida, S. ; Suzuki, J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W4.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
46.

Conference Proceedings
Conference Proceedings
46. AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
Yoshida, S. ; Ishii, H. ; Li, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1527-1530,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
47.

Conference Proceedings
Conference Proceedings
47. Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
Masahara, K. ; Kushibe, M. ; Ohno, H. ; Kojima, K. ; Takahashi, T. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.135-138,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
48.

Conference Proceedings
Conference Proceedings
48. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
49.

Conference Proceedings
Conference Proceedings
49. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
50.

Conference Proceedings
Conference Proceedings
50. Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
Narita, K. ; Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Senzaki, J. ; Nakashima, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.905-908,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
51.

Conference Proceedings
Conference Proceedings
51. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
52.

Conference Proceedings
Conference Proceedings
52. Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
Kojima, K. ; Ohno, T. ; Senzaki, J. ; Fukuda, K. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishino, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.195-198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
53.

Conference Proceedings
Conference Proceedings
53. Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films
Takahashi, T. ; Ishida, Y. ; Tsuchida, H. ; Kamata, I. ; Okumura, H. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.323-326,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
54.

Conference Proceedings
Conference Proceedings
54. 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.275-278,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
55.

Conference Proceedings
Conference Proceedings
55. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
Yaguchi, H. ; Narita, K. ; Hijikata, Y. ; Yoshida, S. ; Nakashima, S. ; Oyanagi, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.621-624,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
56.

Conference Proceedings
Conference Proceedings
56. Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
Ishida, Y. ; Takahashi, T. ; Kojima, K. ; Okumura, H. ; Arai, K. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.213-216,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
57.

Conference Proceedings
Conference Proceedings
57. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.459-462,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
58.

Conference Proceedings
Conference Proceedings
58. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
59.

Conference Proceedings
Conference Proceedings
59. Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
Ishida, Y. ; Kushibe, M. ; Takahashi, T. ; Okumura, H. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.459-462,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
60.

Conference Proceedings
Conference Proceedings
60. Photocatalytic oxidation of n-butane at a steady rate over Rb-modified vanadium oxide supported on silica
Tanaka, T. ; Ito, T. ; Funabiki, T. ; Yoshida, S.
Pub. info.: 12th International Congress on Catalysis : proceedings of the 12th ICC, Granada, Spain, July 9-14, 2000.  pp.1961-,  2000.  Amsterdam.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 130
61.

Technical Paper
Technical Paper
61. Comparative studies on short and long length-scale stall cell propagating in an axial compressor rotor
Inoue, M. ; Kuroumaru, M. ; Tanino, T. ; Yoshida, S. ; Furukawa, M.
Pub. info.: A.S.M.E. paper.  2000.  New York.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2000
62.

Technical Paper
Technical Paper
62. Effect of Tip Clearance on Stall Evolution Process in a Low-Speed Axial Compressor Stage.
Inoue, M. ; Yoshida, S. ; Yamada, K. ; Kuroumaru, M. ; Minami, T.
Pub. info.: A.S.M.E. paper.  2004.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2004
63.

Technical Paper
Technical Paper
63. Evaluation of Low Phosphorus Engine Oil Containing MoDOC.
Yoshida, S. ; Naitoh, Y.
Pub. info.: 2007 International Fuels and Lubricants Meeting : SAE technical paper.  2007.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2007
64.

Technical Paper
Technical Paper
64. Effects of Fuel-Nozzle Configurations on Particulate-Matter Emissions from a Model Gas Turbine Combustor.
Asai, T. ; Koizumi, H. ; Yoshida, S. ; Inoue, H.
Pub. info.: A.S.M.E. paper.  2008.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2008
65.

Technical Paper
Technical Paper
65. Verification of Low NOx Performance of Simple Primary Rich Combustion Approach by a Newly Established Full Annular Combustor Test Facility.
Makida, M. ; Yamada, H. ; Shimodaira, K. ; Yoshida, S. ; Kurosawa, Y.
Pub. info.: A.S.M.E. paper.  2008.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2008
66.

Technical Paper
Technical Paper
66. The Effect of Ashless Antioxidants Type on Friction Reduction Durability on Engine Oils Containing MoDTC.
Yoshida, S. ; Naitoh, Y.
Pub. info.: 2006 Powertrain and Fluid Systems Conference and Exhibition : SAE technical paper.  2006.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2006
67.

Technical Paper
Technical Paper
67. Short and Long Length-Scale Disturbances Leading to Rotating Stall in an Axial Compressor Stage with Different Stator/Rotor Gaps.
Inoue, M. ; Kuromaru, M. ; Yoshida, S. ; Furukawa, M.
Pub. info.: A.S.M.E. paper.  2001.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2001
68.

Technical Paper
Technical Paper
68. Analysis of Deposit formation Mechanism on TEOST 33C by Engine Oil Containing MoDTC.
Yoshida, S. ; Naotoh, Y.
Pub. info.: 2008 Powertrains, Fuels & Lubricants Meeting : SAE technical paper.  2008.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2008
69.

Technical Paper
Technical Paper
69. Development of XF-2 Fighter Composite Structures.(Cocured Composite Wings)
Kageyama, M. ; Yoshida, S.
Pub. info.: SME technical paper.  2001.  Society of Manufacturing Engineers