1.

Conference Proceedings
Conference Proceedings
1. *CONDUCTIVITY CONTROL OF AIGaN, FABRICATION OF AIGaN/GaN MULTI-HETEROSTRUCTURE AND THEIR APPLICATION TO UV/BLUE LIGHT EMITTING DEVICES
Akasaki, I. ; Amano, H.
Pub. info.: Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.383-394,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 242
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Conference Proceedings
Conference Proceedings
2. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
Monemar, B. ; Bergman, J. P. ; Dalfors, J. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Recent Progress in Crystal Growth and Conductivity Control of Wide-Bandgap Group-III Nitride Semiconductors
Akasaki, I.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.145-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
4.

Conference Proceedings
Conference Proceedings
4. N-K-Edge EXAFS Study of Epitaxial GaN Films
Katsikini, M. ; Paloura, E. C. ; Fieber-Erdmann, M. ; Moustakas, T. D. ; Amano, H. ; Akasaki, I.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.459-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. In Situ RHEED-TRAXS Monitoring Alloy Composition of the Surface During RF-MBE Growth of GAlnN and AlGaN
Ito, A. ; Sakai, H. ; Inagaki, M. ; Nomura, G. ; Nakamura, Y. ; Yasuda, T. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.441-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. The Evolution of Nitride Semiconductors
Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.3-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
7.

Conference Proceedings
Conference Proceedings
7. Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
Chen, W. M. ; Buyanova, I. A. ; Wagner, Mt. ; Monemar, B. ; Lindstrom, J. L. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.4.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD
Kaufmann, U. ; Kunzer, M. ; Merz, C. ; Akasaki, I. ; Amano, H.,
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.633-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
9.

Conference Proceedings
Conference Proceedings
9. 2.2 eV Luminescence in GaN
Hofmann, D. M. ; Kovalev, D. ; Steude, G. ; Volm, D. ; Meyer, B. K. ; Xavier, C. ; Monteiro, T. ; Pereira, E. ; Mokov, E. N. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.619-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
10.

Conference Proceedings
Conference Proceedings
10. Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
Wetzel, C. ; Takeuchi, T. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.66.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
11.

Conference Proceedings
Conference Proceedings
11. Optical Investigations of AlGaN on GaN Epitaxial Films
Steude, G. ; Christmann, T. ; Meyer, B. K. ; Goeldner, A. ; Hoffmann, A. ; Bertram, F. ; Christen, J. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.26.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
12.

Conference Proceedings
Conference Proceedings
12. TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
Ruvimov, S. ; Liliental-Weber, Z. ; Dieker, C. ; Washburn, J. ; Koike, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.287-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
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Conference Proceedings
Conference Proceedings
13. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
Amano, H. ; Iwaya, M. ; Hayashi N. ; Kashima, T. ; Katsuragawa, M. ; Takeuchi, T. ; Wetzel, C. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.1.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
14.

Conference Proceedings
Conference Proceedings
14. Optical-Gain Measurements on GaN and AlxGa1-xN Heterostructures
Eckey, L. ; Holst, J. ; Kutzer, V. ; Hoffmann, A. ; Broser, I. ; Ambacher, O. ; Stutzmann, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.237-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
15.

Conference Proceedings
Conference Proceedings
15. Electronic Structure and Temperature Dependence of Excitons in GaN
Buyanova, I. A. ; Bergman, J. P. ; Li, W. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.675-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
16.

Conference Proceedings
Conference Proceedings
16. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
17.

Conference Proceedings
Conference Proceedings
17. Exciton Lifetimes in GaN
Bergman, J. P. ; Harris, C. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.709-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
18.

Conference Proceedings
Conference Proceedings
18. Atomic Structure of Grain Boundaries and Interfaces in III-Nitrides Epitaxial Systems
Ruvimov, S. ; Liliental-Weber, Z. ; Washburn, J. ; Amano, H. ; Akasaki, I. ; Koike, M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.387-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
19.

Conference Proceedings
Conference Proceedings
19. Magneto-Optic Studies of GaN Filmas and GaN/AlGaN Heterostructures
Wang, Y. J. ; Ng, H. K. ; Kaplan, R. ; Doverspike, K. ; Gaskill, D. K. ; Ikedo, T. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.697-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
20.

Conference Proceedings
Conference Proceedings
20. Effect of Si Doping on the Structure of GaN
Liliental-Weber, Zuzanna ; Ruvimov, S. ; Suski, T. ; Ager, J. W., III ; Swider, W. ; Chen, Y. ; Kisielowski, Ch. ; Washburn, J. ; Akasaki, I. ; Amano, H. ; Kuo, C. ; Imler, W.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.487-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
21.

Conference Proceedings
Conference Proceedings
21. Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures
Buyanov, A. V. ; Sandberg, J. ; Bergman, J. P. ; Sernelius, B. E. ; Holtz, P-O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.585-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
22.

Conference Proceedings
Conference Proceedings
22. Localized Donors in GaN: Spectroscopy Using Large Pressures
Wetzel, C. ; Amano, H. ; Akasaki, I. ; Suski, T. ; Ager, J. W. ; Weber, E. R. ; Haller, E. E. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.489-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
23.

Conference Proceedings
Conference Proceedings
23. Photocurrent Response in Mg-Doped GaN
Qiu, C. H. ; Pankove, J. I. ; Akasaki, I. ; Amano, H.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.519-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
24.

Conference Proceedings
Conference Proceedings
24. Optical Properties of InGaN/GaN Multiquantum-Well Structures
Bergman, J. P. ; Saksulv, N. ; Dalfors, J. ; Holtz, P. O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.631-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
25.

Conference Proceedings
Conference Proceedings
25. Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate
Amano, H. ; Takekuchi, T. ; Yamaguchi, S. ; Nitta, S. ; Kariya, M. ; Iwaya, M. ; Wetzel, C. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.479-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
26.

Conference Proceedings
Conference Proceedings
26. Photoluminescence Excitation Studies of the Optical Transitions in GaN
Kovalev, D. ; Averboukh, B. ; Meyer, B-K. ; Volm, D. ; Amano, H. ; Akasaki, I.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.701-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
27.

Conference Proceedings
Conference Proceedings
27. Conductivity Measurements of GaN Grown by OMVPE and HVPE
Ben-Chorin, M. ; Diener, J. ; Meyer, B. K. ; Drechsler, M. ; Volm, D. ; Amano, H. ; Akasaki, I. ; Detchprohm, T. ; Hiramatsu, K.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.467-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
28.

Conference Proceedings
Conference Proceedings
28. Spatially-Resolved Photoluminescence and Raman Study on the GaN/Substrate Interface
Siegle, H. ; Thurian, P. ; Eckey, L. ; Hoffmann, A. ; Thomsen, C. ; Meyer, B. K. ; Detchprohm, T. ; Hiramatsu, K. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.577-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
29.

Conference Proceedings
Conference Proceedings
29. Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures
Bergman, J. P. ; Lundstrom, T. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.595-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
30.

Conference Proceedings
Conference Proceedings
30. Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
Eckey, L. ; Hoffmann, A. ; Heitz, R. ; Broser, I. ; Meyer, B. K. ; Detchprohm, T. ; Hiramatsu, K. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.589-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
31.

Conference Proceedings
Conference Proceedings
31. Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors
Koike, M. ; Shibata, N. ; Yamasaki, S. ; Nagai, S. ; Asami, S. ; Kato, H. ; Koide, N. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.889-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
32.

Conference Proceedings
Conference Proceedings
32. Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure
Wetzel, C. ; Walukiewicz, W. ; Haller, E. E. ; Amano, H. ; Akasaki, I.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.509-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
33.

Conference Proceedings
Conference Proceedings
33. Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies
Gotz, W. ; Johnson, N. M. ; Street, R. A. ; Amano, H. ; Akasaki, I.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.491-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
34.

Conference Proceedings
Conference Proceedings
34. Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure
Amano, H. ; Takeuchi, T. ; Sota, S. ; Sakai, H. ; Akasaki, I.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1143-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449