1.

Conference Proceedings
Conference Proceedings
1. Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation
Venezia, V. C. ; Haynes, T. E. ; Agarwal, A. ; Gossmann, H-J. ; Eaglesham, D. J.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.303-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
2.

Conference Proceedings
Conference Proceedings
2. Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects
Agarwal, A. ; Gossmann, H-J. ; Fiory, A. T.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.19-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
3.

Conference Proceedings
Conference Proceedings
3. Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers
Agarwal, A. ; Gossmann, H-J. ; Eaglesham, D. J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.3-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
4.

Conference Proceedings
Conference Proceedings
4. Shallow Boron Implant Activation
Fiory, A. T. ; Bourdelle, K. K. ; Agarwal, A. ; Gossmann, H-J. ; Rafferty, C. S.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.31-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568