1.

Conference Proceedings
Conference Proceedings
1. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
3.

Conference Proceedings
Conference Proceedings
3. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
4.

Conference Proceedings
Conference Proceedings
4. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
5.

Conference Proceedings
Conference Proceedings
5. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
6.

Conference Proceedings
Conference Proceedings
6. The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides
Vartuli, C.B. ; Pearton, S.J. ; Abernathy, C.R. ; Shul, R.J. ; Ren, F.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.39-56,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
7.

Conference Proceedings
Conference Proceedings
7. Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Pearton, S.J. ; Ren, F. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.138-161,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
8.

Conference Proceedings
Conference Proceedings
8. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
9.

Conference Proceedings
Conference Proceedings
9. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
10.

Conference Proceedings
Conference Proceedings
10. Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors
Monier, C. ; Pearton, S.J. ; Baca, Albert G. ; Chang, P.C. ; Zhang, L. ; Han, J. ; Shul, R.J. ; Ren, F. ; LaRoche, J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.3-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622