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11 results

Conference Proceedings

1. Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

A. Constant ; N. Camara ; J. Montserrat ; E. Pausas ; J. Camassel

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.500-503, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

2. Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)

A. Caboni ; N. Camara ; E. Pausas ; N. Mestres ; P. Godignon

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.781-784, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

3. Reliability Aspects of High Voltage 4H-SiC JBS Diodes

P. Brosselard ; N. Camara ; X. Jordá ; M. Vellvehi ; E. Bano

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.935-938, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

4. 3.3 kV-10A 4H-SiC PiN Diodes

P. Brosselard ; N. Camara ; J. Hassan ; X. Jordá ; J.P. Bergman

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.991-994, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

5. Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

B. Jabakhanji ; N. Camara ; A. Caboni ; C. Consejo ; B. Jouault

Pub. info.:	HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France. pp.235-241, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	711

Conference Proceedings

6. Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

N. Camara ; L.P. Romanov ; A.V. Kirillov ; M.S. Boltovets ; A.A. Lebedev ; V.V. Zelenin ; M. Kayambaki ; K. Zekentes

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.933-936, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

7. Microwave p-i-n Diodes and Switches Based on 4H-SiC

K. Zekentes ; N. Camara ; L.P. Romanov ; A.V. Kirillov ; M.S. Boltovets

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.999-1002, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

8. Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

N. Camara ; J.R. Huntzinger ; A. Tiberj ; G. Rius ; B. Jouault

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.203-206, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

9. AFM and Raman Studies of Graphene Exfoliated on SiC

A. Tiberj ; M. Martin ; N. Camara ; P. Poncharal ; T. Michel

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.215-218, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

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Conference Proceedings

10. Differences between Graphene Grown on Si-Face and C-Face

N. Camara ; A. Caboni ; J.R. Huntzinger ; A. Tiberj ; N. Mestres

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.581-584, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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Author: N. Camara