1.

Conference Proceedings
Conference Proceedings
1. Hydrogen in Crystalline Gallium Phosphide
Clerjaud,B. ; Cote,D. ; Hahn,Won Sic
Pub. info.: Hydrogen in compound semiconductors.  pp.281-294,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 148-149
2.

Conference Proceedings
Conference Proceedings
2. Carbon-hydrogen interaction in III-V compounds
Clerjaud,B. ; Cote,D. ; Gendron,F. ; Hahn,W-S. ; Krause,M. ; Porte,C. ; Ulrici,W.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.563-568,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
3.

Conference Proceedings
Conference Proceedings
3. Reinvestigation of the optical properties of the iron impurity in GaAs and InP
Hennel,A.M. ; Wysmolek,A. ; Bozek,R. ; Cote,D. ; Naud,C.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.729-734,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
4.

Conference Proceedings
Conference Proceedings
4. Nitrogen-Hydrogen Complexes in GaP and GaAs
Hahn,W.-S. ; Clerjaud,B. ; Cote,D. ; Gendron,F. ; Porte,C. ; Ulrici,W. ; Wasik,D. ; Wilkening,W.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.277-282,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
5.

Conference Proceedings
Conference Proceedings
5. Isotopic Effects in GaAs:Ni
Clenjaud,B. ; Cote,D. ; Gendron,F. ; Krause,M. ; Ulrici,W.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.775-778,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
6.

Conference Proceedings
Conference Proceedings
6. New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
Wolf,T. ; Ulrici,W. ; Cote,D. ; Clerjaud,B. ; Bimberg,D.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.317-322,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
7.

Conference Proceedings
Conference Proceedings
7. Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds
Svob,L. ; Marfaing,Y. ; Clerjaud,B. ; Cote,D. ; Ballutaud,D. ; Theys,B. ; Druilhe,R. ; Kuhn,W. ; Stanzl,H. ; Gebhardt,W.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.447-452,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
8.

Conference Proceedings
Conference Proceedings
8. Spectroscopic investigation of neutral niobium in GaAs
Ammerlahn,D. ; Clerjaud,B. ; Cote,D. ; Kohne,L. ; Krause,M. ; Bimberg,D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.911-916,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
9.

Conference Proceedings
Conference Proceedings
9. Investigation of the Manganese-Hydrogen Complex in InP
Clajaud,B. ; Cote,D. ; Lebkiri,A. ; Mari,A.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.975-980,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201