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Conference Proceedings

1. AIGaN and GaN Ultraviolet Photodetectors

Hickman, R. ; Van Hove, J.M. ; Klaassen, J.J. ; Polley, C.J. ; Wowchack, A.M. ; Chow, P.P. ; King, D.J. ; Pearton, S.I. ; Jung, K.B. ; Cho, H.

Pub. info.:	Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX). pp.201-209, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-4

Conference Proceedings

2. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges

Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.66.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

3. Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy

Hickman, R. ; Hove, J. M. Van ; Chow, P. P. ; Klaassen, J. J. ; Wowchack, A. M. ; Polley, C. J.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.405-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

4. Surface conversion effects in plasma-damaged p-GaN

Cao, X. A. ; Pearton, S. J. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Shul, R. J. ; Zhang, L. ; Hickman, R. ; Hove, J. M. Van

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W10.8.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

5. Regeneration of Acids and Bases by Electrodialysis

Farmer, J. ; Fix, D. ; Summers, L. ; Hickman, R. ; Adamson, M.

Pub. info.:	Proceedings of the Symposium on Water Purification by Photocatalytic, Photoelectrochemical, and Electrochemical Processes. pp.184-190, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-19

Conference Proceedings

6. Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE

Hove, J. M. Van ; Chow, P. P. ; Hickman, R. ; Wowchak, A. M. ; Klaassen, J. J. ; Polley, C. J.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1227-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Technical Paper

7. Advanced Materials and Processes for Boost Phase Nozzles

Hickman, R. ; McKechnie, T.

Pub. info.:	AIAA meeting papers on disc. 2004. [Reston, Va.]. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit
Ser. no.:	40th

Technical Paper

8. Material Properties of Net Shape, Vacuum Plasma Sprayed Rhenium and Tungsten

Hickman, R. ; McKechnie, T. ; O'Dell, S.

Pub. info.:	AIAA paper. 2003. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit
Ser. no.:	2003

Technical Paper

9. Material Properties of Net Shape, Vacuum Plasma Sprayed GRCop-84

Hickman, R. ; McKechnie, T. ; Holmes, R. ; Elam, S.

Pub. info.:	AIAA paper. 2003. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit
Ser. no.:	2003

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Technical Paper

10. ARES: Affordable REusable Spacelift

Adams, J. ; Hampsten, K. ; Hickman, R.

Pub. info.:	AIAA meeting papers on disc. 2005. [Reston, Va.]. American Institute of Aeronautics and Astronautics
Title of ser.:	AIAA Paper : AIAA Space Conference and Exposition
Ser. no.:	2005

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Author: Hickman, R.