1.

Conference Proceedings
Conference Proceedings
1. 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
Fedison, J.B. ; Cowen, C.S. ; Garrett, J.L. ; Downey, E.T. ; Kretchmer, J.W. ; Klinger, R.L. ; Peters, H.C. ; Tucker, J.B. ; Matocha, K.S. ; Rowland, L.B. ; Arthur, S.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1265-1268,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Tang, Y. ; Fedison, J.B. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1329-1332,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Extended Defects in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.199-204,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
4.

Conference Proceedings
Conference Proceedings
4. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
Fedison, J.B. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.739-742,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. Reactive ion etching of GaN in BCl3/N2 plasmas
Fedison, J.B. ; Chow, T.P. ; Lu, H. ; Bhat, I.B.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.168-179,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
7.

Conference Proceedings
Conference Proceedings
7. Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Tang, Y. ; Fedison, J.B. ; Chow, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1329-1332,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
Twigg, M.E. ; Stahlbush, R.E. ; Fatemi, M. ; Arthur, S.D. ; Fedison, J.B. ; Tucker, J.B. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.537-542,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Stahlbush, R.E. ; Fedison, J.B. ; Arthur, S.D. ; Rowland, L.B. ; Kretchmer, J.W. ; Wang, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.427-430,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393