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20 results

Conference Proceedings

1. TRIMETHYLAMINE ALANE FOR LOW-PRESSURE MOVPE GROWTH OF AlGaAs-BASED MATERIALS AND DEVICE STRUCTURES

Schneider, R. P. ; Bryan, R. P. ; Jones, E. D. ; Biefeld, R. M. ; Olbright, G. R.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.69-74, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. FERMI LEVEL EFFECTS ON DISLOCATION FORMATION IN IaAs1-xSbx GROWN BY MOCVD

Biefeld, R. M. ; Drummond, T. J.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.39-44, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF InSb ON GaAs AND InSb IN AN INVERTED STAGNATION POINT FLOW GEOMETRY

Hebner, G. A. ; Biefeld, R. M. ; Killeen, K. P.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.73-78, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

4. PHOTOLYTIC DEPOSITION OF InSb FILMS

Zuhoski, S. P. ; Killeen, K. P. ; Biefeld, R. M.

Pub. info.:	Laser and particle-beam chemical processing for microelectronics : symposium held December 1-3, 1987, Boston, Massachusetts, USA. pp.313-318, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	101

Conference Proceedings

5. THE OPTIMIZATION OF INTERFACES IN InAsSb/InGaAs STRAINED-LAYER SUPERLATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

Biefeld, R. M. ; Baucom, K. C. ; Kurtz, S. R.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.247-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

6. THE GROWTH OF InAsSb/InGaAs STRAINED-LAYER SUPERLATTICES BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

Biefeld, R. M. ; Baucom, K. C. ; Kurtz, S. R. ; Follstaedt, D. M.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.493-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

7. The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire

Ng, T. B. ; Han, J. ; Biefeld, R. M. ; Zolper, J. C. ; Crawford, M. H. ; Follstaedt, D. M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.143-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. EFFECTS OF GROWTH CONDITIONS AND SUBSTRATE ORIENTATION ON THE PROPERTIES OF InSb

Biefeld, R. M. ; Baucom, K. C.

Pub. info.:	Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.. pp.179-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	312

Conference Proceedings

9. Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100°C

Zolper, J. C. ; Han, J. ; Biefeld, R. M. ; Van Deusen, S. B. ; Wampler, W. R. ; Pearton, S. J. ; Williams, J. S ; Tan, H. H. ; Karlicek, R. J., Jr. ; Stall, R. A.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.401-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

10.

Conference Proceedings

10. Recent Progress in the Growth of Mid-IR Emitters by Metalorganic Chemical Vapor Deposition

Biefeld, R. M. ; Allerman, A. A. ; Kurtz, S. R. ; Baucom, K. C.

Pub. info.:	Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.19-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	484

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