1.

Conference Proceedings
Conference Proceedings
1. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
2.

Conference Proceedings
Conference Proceedings
2. III-Nitride ion implantation and device processing
Zolper, J.C. ; Shul, R.J. ; Baca, A.G. ; Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Stall, R.A. ; Shur, M.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.149-158,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
3.

Conference Proceedings
Conference Proceedings
3. The Role of AlN Encapsulation of GaN During Implant Activation Annealing
Zolper, J.C. ; Pearton, S.J. ; Rieger, D.J. ; Baca, A.G. ; Lee, J.W. ; Vartulli, C.R. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.244-248,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15