1.

Conference Proceedings
Conference Proceedings
1. Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe
Peinejori, I. ; Zhang, S.-L. ; Grahn, J.V. ; OEstling, M.
Pub. info.: CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition.  pp.403-410,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-13
2.

Conference Proceedings
Conference Proceedings
2. CHARACTERIZATION OF SILICIDE FORMATION OF LPCVD-W BY MEANS OF RUTHERFORD BACKSCATTERING SPECTROMETRY AND X-RAY DIFFRACTOMETRY
Zhang, S.-L. ; Buchta, R. ; Ostling, M.
Pub. info.: Chemical vapor deposition of refractory metals and ceramics : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.173-178,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 168
3.

Conference Proceedings
Conference Proceedings
3. Impact of Rapid Thermal Annealing of Ti-TiN Bilayers on Subsequent Chemical Vapor Deposition of Tungsten
Mouroux, A. ; Palmans, R. ; Keinonen, J. ; Zhang, S.-L. ; Maex, K. ; Petersson, C. S.
Pub. info.: Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A..  pp.365-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 427
4.

Conference Proceedings
Conference Proceedings
4. Circuit simulation of RTD and HPT monolithic optoelectronic integration
Niu, P.-J. ; Guo, W.-L. ; Liang, H.-L. ; Zhang, S.-L. ; Miao, C.-Y. ; Wang, J.-H. ; Qi, H.-T.
Pub. info.: Advanced materials and devices for sensing and imaging : 17-18 October 2002, Shanghai, China.  pp.446-448,  2002.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4919
5.

Conference Proceedings
Conference Proceedings
5. Novel Integration Concepts for SiGe-Based RF-MOSFETs (Invited paper)
Ostling, M. ; Malm, B. G. ; Hellstrom, P-E. ; Radamson, H.H. ; Isheden, C. ; Seger, J. ; von Haartman, M. ; Zhang, S.-L.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.270-284,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
6.

Conference Proceedings
Conference Proceedings
6. Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates
Mouroux, A. ; Zhang, S.-L. ; Kaplan, W. ; Nygren, S. ; Ostling, M. ; Petersson, C. S.
Pub. info.: Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A..  pp.511-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 427
7.

Conference Proceedings
Conference Proceedings
7. Design on MBE material structure of GaAs-based RTD
Guo, W.-L. ; Liang, H.-L. ; Niu, P.-J. ; Zhang, S.-L.
Pub. info.: Nano- and Microtechnology: Materials, Processes, Packaging, and Systems.  pp.373-380,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4936