1.

Conference Proceedings
Conference Proceedings
1. QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
Lucovsky, G. ; Ma, Y. ; He, S.S. ; Yasuda, T. ; Stephens, D.J. ; Habermehl, S.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD
Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.147-152,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
3.

Conference Proceedings
Conference Proceedings
3. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Photons and low energy particles in surface processing : symposium held Decmber[i.e. December] 3-6, 1991, Boston, Massachusetts, U.S.A..  pp.341-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 236
4.

Conference Proceedings
Conference Proceedings
4. PHOTOLUMINESCENCE STUDY OF Li-IMPLANTATION INTO ZnSe EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY
Yasuda, T. ; Jin, M. K. ; gaines, J. ; Merz, J. L.
Pub. info.: Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A..  pp.333-338,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 228
5.

Conference Proceedings
Conference Proceedings
5. P-TYPE CONDUCTION IN BULK ZnSe BY NITROGEN ION-IMPLANTATION
Jin, M. K. ; Yasuda, T. ; Shahzad, K. ; Merz, J. L.
Pub. info.: Materials for optical information processing : symposium held May 1-3, 1991, Anaheim, California, U.S.A..  pp.345-350,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 228
6.

Conference Proceedings
Conference Proceedings
6. Fast In-Diffusion Of Hydrogen At The Initial Stage Of Hydrogen Plasma Treatment On a-Si:H Films Observed By In-Situ ESR Measurements
Das, U. K. ; Yamasaki, S. ; Yasuda, T.
Pub. info.: Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A..  pp.A26.5-,  2001.  Warrendale.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 609
7.

Conference Proceedings
Conference Proceedings
7. INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES
Hattangady, S. ; Misra, V. ; Yasuda, T. ; Xu, X.L. ; Hornung, B. ; Lucovsky, G. ; Wortman, J.J.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.288-295,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
8.

Conference Proceedings
Conference Proceedings
8. CHEMICALLY MODIFIED SECOND HARMONIC GENERATION AT SURFACES ON VICINAL Si(111) WAFERS
Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H. ; Bjorkman, C.H. ; Shearon, Jr., C.E. ; Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.815-820,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
9.

Conference Proceedings
Conference Proceedings
9. Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF Si
Yasuda, T. ; Ma, Y. ; Habermehl, S. ; Kim, S.S. ; Lucovsky, G. ; Schneider, T.P. ; Cho, J. ; Nemanich R.J.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
10.

Conference Proceedings
Conference Proceedings
10. COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE TO ATOMIC H PRIOR TO OXIDATION AND DEPOSITION
Yasuda, T. ; Ma, Y. ; Habermechl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.473-480,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
11.

Conference Proceedings
Conference Proceedings
11. CONTROL OF PROCESS-INDUCED DEFECTS IN THE FORMATION OF SINGLE AND MULTIPLE LAYER DIELECTRIC STRUCTURES FOR Si SEMICONDUCTOR DEVICES
He, S. S. ; Stephens, D. J. ; Ma. Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.653-658,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
12.

Conference Proceedings
Conference Proceedings
12. LOW-TEMPERATURE DEVICE-QUALITY SiO2/Si (100) INTERFACES PREPARED BY A COMBINED REMOTE PLASMA OXIDATION-DEPOSITION PROCESS
Yasuda, T. ; ma, Y. ; Lucovsky, G.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.713-720,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
13.

Conference Proceedings
Conference Proceedings
13. A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; He, S.S. ; Stephens, D.J. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.69-74,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
14.

Conference Proceedings
Conference Proceedings
14. SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)
Lamb, H.H. ; Kalem, S. ; Bedge, S. ; Yasuda, T. ; Ma, Y. ; Lucovsky, G.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.75-80,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
15.

Conference Proceedings
Conference Proceedings
15. INTEGRATED, DUAL-FUNCTION REMOTE PLASMA-ENHANCED PROCESSING APPLIED TO LOW DAMAGE SiO2 ETCHING AND REMOVAL OF C-F POLYMER RESIDUES
Yasuda, T. ; Lucovsky, G.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.523-528,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
16.

Conference Proceedings
Conference Proceedings
16. Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS
Ma, Y. ; Yasuda, T. ; Habermehl, S. ; Lucovsky, G.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.799-806,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
17.

Conference Proceedings
Conference Proceedings
17. CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES
Lucovsky, G. ; Yasuda, T. ; Ma, Y. ; Hattangady, S. V. ; Xu, X-L. ; Misra, V. ; Hornung, B. ; Wortman, J. J.
Pub. info.: Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.81-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 318
18.

Conference Proceedings
Conference Proceedings
18. In Situ RHEED-TRAXS Monitoring Alloy Composition of the Surface During RF-MBE Growth of GAlnN and AlGaN
Ito, A. ; Sakai, H. ; Inagaki, M. ; Nomura, G. ; Nakamura, Y. ; Yasuda, T. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.441-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
19.

Conference Proceedings
Conference Proceedings
19. A LOW-TEMPERATURE PROCESS FOR DEVICE QUALITY Si/SiO2 INTERFACES ON Si(111)
Yasuda, T. ; Lee, D. R. ; Bjorkman, C. H. ; Ma, Y. ; Lucovsky, G. ; Emmerichs, U. ; Meyer, C. ; Leo, K. ; Kurz, H.
Pub. info.: Surface chemical cleaning and passivation for semiconductor processing.  pp.375-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 315
20.

Conference Proceedings
Conference Proceedings
20. Nucleation Processes in Si CVD on Ultrathin SiO2 Layers
Yasuda, T. ; Hwang, D. S. ; Ikuta, K. ; Yamasaki, S. ; Tanaka, K.
Pub. info.: Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.439-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 536
21.

Conference Proceedings
Conference Proceedings
21. (4.5) 7:37 - 7:40 PM - Ge-MIS Structures by Direct Nitridation of Ge
Maeda, T. ; Yasuda, T. ; Nishizawa, M. ; Miyata, N. ; Morita, Y. ; Takagi, S.(MIRAI-AIST)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.167-174,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
22.

Conference Proceedings
Conference Proceedings
22. Exciton Properties of Zn(S,Se) Ordered Alloys Fabricated by Hydrogen Radical Enhanced Chemical Vapor Deposition
Fujiwara, H. ; Nabeta, T. ; Yasuda, T. ; Shimizu, I.
Pub. info.: Proceedings of the second International Symposium on Electrochemical Processing of Tailored Materials.  pp.43-57,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-12
23.

Conference Proceedings
Conference Proceedings
23. Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing
Kadoshima, M. ; Yamamoto, K. ; Fujiwara, H. ; Akiyama, K. ; Tominaga, K. ; Yamagishi, N. ; Iwamoto, K. ; Ohno, M. ; Yasuda, T. ; Nabatame, T. ; Toriumi, A.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.279-284,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
24.

Conference Proceedings
Conference Proceedings
24. Substrate-Surface Effect on Initial Growth Process of Microcrystalline Silicon Films
Ikuta, K. ; Park, J. W. ; Kuo, L. H. ; Yasuda, T. ; Yamasaki, S. ; Tanaka, K.
Pub. info.: Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.743-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 452
25.

Conference Proceedings
Conference Proceedings
25. SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING
Ma, Y. ; Hattangady, S. V. ; Yasuda, T. ; Niimi, H. ; Gandhi, S. ; Lucovsky, G.
Pub. info.: Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.169-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 342
26.

Conference Proceedings
Conference Proceedings
26. Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and rapid thermal processing
Ma, Y. ; Yasuda, T. ; Lucovsky, G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.569-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
27.

Conference Proceedings
Conference Proceedings
27. Characterization of Nitrogen Species for P-Type Doping of Znse
Kimura, K. ; Kajiyama, H. ; Miwa, S. ; Yasuda, T. ; Kuo, L. H. ; Jin, C. G. ; Tanaka, K. ; Yao, T.
Pub. info.: Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A..  pp.51-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 406
28.

Technical Paper
Technical Paper
28. Disemination Project for High Performance Industrial Furnaces of Highly Preheated Air Combustion Technology
Yasuda, T.
Pub. info.: AIAA paper.  pp.1-6,  1999.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : Aerospace Sciences Meeting and Exhibit
Ser. no.: 1999
29.

Technical Paper
Technical Paper
29. Processing of a single crystal casting for heavy-duty gas turbine blades: Creep and metal/mould reaction behavior of Al2O3-SiO2 Shell mould
Iijima, K. ; Yoshinari, A. ; Ishida, T. ; Yasuda, T. ; Matsuzaki, H. ; Shimomura, K.
Pub. info.: A.S.M.E. paper.  1993.  New York, NY.  The American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 1993
30.

Technical Paper
Technical Paper
30. Fault Detection and Identification in an IM270 Gas Turbine using Measurements for Engine Control.
Kurosaki, M. ; Morioka, T. ; Ebine, K. ; Maruyama, M. ; Yasuda, T.
Pub. info.: A.S.M.E. paper.  2003.  New York, NY.  American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 2003
31.

Technical Paper
Technical Paper
31. Disemination project for high performance industrial furnaces of highly preheated air combustion technology
Yasuda, T.
Pub. info.: AIAA paper.  pp.1-6,  1999.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : Aerospace Sciences Meeting and Exhibit
Ser. no.: 1999
32.

Conference Proceedings
Conference Proceedings
32. High efficiency polarization-sensitive photovoltaic devices using oriented organic thin film [5938-41]
Tanaka, H. ; Yasuda, T. ; Fujita, K. ; Tsutsui, T.
Pub. info.: Organic Photovoltaics VI.  pp.593811-593811,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5938
33.

Conference Proceedings
Conference Proceedings
33. Organic-inorganic field effect transistor with Snl-based perovskite channel layer using vapor phase deposition technique
Matsushima, T. ; Yasuda, T. ; Fujita, K. ; Tsutsui, T.
Pub. info.: Organic Field Effect Transistors II.  pp.43-54,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5217
34.

Conference Proceedings
Conference Proceedings
34. Poly-p-xylylene derivative as non-solution processible gate dielectric materials for organic field effect transistor
Yasuda, T. ; Fujita, K. ; Tsutsui, T.
Pub. info.: Organic Field Effect Transistors II.  pp.202-209,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5217