1.

Conference Proceedings
Conference Proceedings
1. Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
Son, N. T. ; Isoya, J. ; Yamasaki, S. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.351-354,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Pulsed ESR Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H
Yamasaki, S. ; Umeda, T. ; Isoya, J. ; Matsuda, A. ; Tanaka, K.
Pub. info.: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.587-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 420
3.

Conference Proceedings
Conference Proceedings
3. ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface
Isoya, J. ; Kosugi, R. ; Fukuda, K. ; Yamasaki, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1025-1028,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface
Isoya, J. ; Kosugi, R. ; Fukuda, K. ; Yamasaki, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1025-1028,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
Mizuochi, N. ; Isoya, J. ; Yamasaki, S. ; Takizawa, H. ; Morishita, N. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.497-500,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
Mizuochi, N. ; Isoya, J. ; Yamasaki, S. ; Takizawa, H. ; Morishita, N. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.497-500,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Pulsed ESR Characterization of Si02 Thin Layers on Si
Isoya, J. ; Yamasaki, S. ; Tanaka, K. ; Kamigaki, Y. ; Kobayashi, T. ; Morita, Y. ; Morishita, N.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.459-462,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2