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Conference Proceedings

1. Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

G.S. Sun ; J. Ning ; X.F. Liu ; Y.M. Zhao ; J. Li ; L. Wang ; W.S. Zhao

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.179-182, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

X.F. Liu ; G.S. Sun ; Y.M. Zhao ; J. Ning ; J.Y. Li ; L. Wang ; W.S. Zhao ; M.C. Luo ; J.M. Li

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.109-112, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

X.F. Liu ; G.S. Sun ; J.M. Li ; Y.M. Zhao ; J.Y. Li ; L. Wang ; W.S. Zhao ; M.C. Luo ; Y.P. Zeng

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.387-390, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

4. Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface

Z.W. Shen ; F. Zhang ; S. Dimitrijev ; J.S. Han ; L.X. Tian ; G.G. Yan ; Z.X. Wen ; W.S. Zhao ; L. Wang ; X.F. Liu ; G.S. Sun ; Y.P. Zeng

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.719-722, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897