1.

Conference Proceedings
Conference Proceedings
1. LPE of Silicon Carbide Using Diluted Si-Ge Flux
Filip, O. ; Epelbaum, B. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.133-136,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Flexible polymeric light-emitting diodes
Paetzold, R. ; Henseler, D. ; Heuser, K. ; Sarfert, W. ; Wittmann, G. ; Winnacker, A.
Pub. info.: Organic light-emitting materials and devices VII : 4-6 August 2003 San Diego, California, USA.  pp.348-355,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5214
3.

Conference Proceedings
Conference Proceedings
3. High-sensitivity permeation measurements on flexible OLED substrates
Paetzold, R. ; Henseler, D. ; Heuser, K. ; Cesari, V. ; Sarfert, W. ; Wittmann, G. ; Winnacker, A.
Pub. info.: Organic light-emitting materials and devices VII : 4-6 August 2003 San Diego, California, USA.  pp.73-82,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5214
4.

Conference Proceedings
Conference Proceedings
4. Investigation of the V4+ -Center In 6H- and 4H-SiC by the Method of Spectral-Hole Burning
Hecht, C. ; Kummer, R. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.369-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
5.

Conference Proceedings
Conference Proceedings
5. Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
Hofmann, D. ; Eckstein, R. ; Kadinski, L. ; Kolbl, M. ; Muller, M. ; Muller, St. G. ; Schmitt, E. ; Weber, A. ; Winnacker, A.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
6.

Conference Proceedings
Conference Proceedings
6. Color Engineering of Garnet Based Phosphors for Luminescence Conversion Light Emitting Diodes (LUCOLEDs)
Batentschuk, M. ; Schmitt, B. ; Schneider, J. ; Winnacker, A.
Pub. info.: Luminescent materials : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.215-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 560
7.

Conference Proceedings
Conference Proceedings
7. Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Eckstein, R. ; Hofmann, D. ; Makarov, Y. ; Muller, St. G. ; Pensl, G. ; Schmitt, E. ; Winnacker, A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.215-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
8.

Conference Proceedings
Conference Proceedings
8. Optimization of Mixed Storage Phosphors of the Type (Ba,Sr)F1+xBr1-x:Eu for Digital X-ray Radiography
Batentschuk, M. ; Hackenschmied, P. ; Winnacker, A. ; Moll, M. ; Fasbender, R.
Pub. info.: Luminescent materials : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.27-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 560
9.

Conference Proceedings
Conference Proceedings
9. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Epelbaum, B. M. ; Hofmann, D. ; Muller, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.107-110,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
11.

Conference Proceedings
Conference Proceedings
11. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Wellmann, P. J. ; Bickermann, M. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.71-74,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
12.

Conference Proceedings
Conference Proceedings
12. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
Straubinger, T. L. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Kadinski, L. ; Muller, S. G. ; Selder, M. ; Wellmann, P. J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.39-42,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
13.

Conference Proceedings
Conference Proceedings
13. Hollow Defect Elimination During Solution Growth of SiC
Epelbaum, B. M. ; Hofmann, D. ; Mueller, M. ; Winnacker, A.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
14.

Conference Proceedings
Conference Proceedings
14. Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
Hofmann, D. ; Bickermann, M. ; Hartung, W. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.445-448,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
15.

Conference Proceedings
Conference Proceedings
15. Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
Wellmann, P. J. ; Straubinger, T. L. ; Desperrier, P. ; Muller, R. ; Kunecke, U. ; Sakwe, S. A. ; Schmitt, H. ; Winnacker, A. ; Blanquet, E. ; Dedulle, J. M. ; Pons, M.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.25-30,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. [0115] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
Seitz, C. ; Herro, Z. G. ; Epelbaum, B. M. ; Winnacker, A. ; Hock, R. ; Magerl, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.307-310,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
17.

Conference Proceedings
Conference Proceedings
17. Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
Epelbaum, B.M. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.983-986,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
18.

Conference Proceedings
Conference Proceedings
18. Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
Wellmann, P.J. ; Herro, Z. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.91-94,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
19.

Conference Proceedings
Conference Proceedings
19. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
Bickermann, M. ; Epelbaum, B.M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1541-1544,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
22.

Conference Proceedings
Conference Proceedings
22. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
Desperrier, P. ; Mueller, R. ; Winnacker, A. ; Wellmann, P.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.727-730,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
24.

Conference Proceedings
Conference Proceedings
24. In-Situ Er-Doping of SiC Bulk Single Crystals
Mueller, R. ; Desperrier, P. ; Seitz, C. ; Weisser, M. ; Magerl, A. ; Maier, M. ; Winnacker, A. ; Wellmann, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.723-726,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
25.

Conference Proceedings
Conference Proceedings
25. Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
Herro, Z.G. ; Bickermann, M. ; Epelbaum, B.M. ; Weingaertner, R. ; Kuenecke, U. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.719-722,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
26.

Conference Proceedings
Conference Proceedings
26. Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
Epelbaum, B.M. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1537-1540,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
27.

Conference Proceedings
Conference Proceedings
27. Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
Epelbaum, B.M. ; Hofmann, D. ; Hecht, U. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.307-310,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
28.

Conference Proceedings
Conference Proceedings
28. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.645-648,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
30.

Conference Proceedings
Conference Proceedings
30. Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
Bickermann, M. ; Irmscher, K. ; Epelbaum, B.M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.787-790,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
31.

Conference Proceedings
Conference Proceedings
31. Photoluminescence Study of In Situ Rare Earth Doped PVT-Grown SiC Single Crystals
Schmitt, H. ; Muller, R. ; Maier, M. ; Winnacker, A. ; Wellmann, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.445-448,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
32.

Conference Proceedings
Conference Proceedings
32. Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC
Muller, St. G. ; Hofmann, D. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.275-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
33.

Conference Proceedings
Conference Proceedings
33. On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging
Wellmann, P. J. ; Bickermann, M. ; Grau, M. ; Hofmann, D. ; Straubinger, T. L. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.259-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
34.

Conference Proceedings
Conference Proceedings
34. Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
Weingartner, R. ; Albrecht, A. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.341-344,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
35.

Conference Proceedings
Conference Proceedings
35. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
36.

Conference Proceedings
Conference Proceedings
36. Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Weingartner, R. ; Bickermann, M. ; Herro, Z. ; Kunecke, U. ; Sakwe, S.A. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.333-336,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
37.

Conference Proceedings
Conference Proceedings
37. Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Herro, Z. ; Bickermann, M. ; Epelbaum, B.M. ; Masri, P. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.67-70,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
38.

Conference Proceedings
Conference Proceedings
38. Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
Epelbaum, B.M. ; Gurzhiyants, P.A. ; Herro, Z. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.119-122,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
39.

Conference Proceedings
Conference Proceedings
39. Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
Herro, Z.G. ; Epelbaum, B.M. ; Bickermann, M. ; Masri, P. ; Seitz, C. ; Magerl, A. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.111-114,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
40.

Conference Proceedings
Conference Proceedings
40. Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Wellmann, P.J. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.11-14,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
41.

Conference Proceedings
Conference Proceedings
41. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Epelbaum, B.M. ; Hofmann, D. ; Bickermann, M. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1445-1448,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. Stability Criteria for 4H-SiC Bulk Growth
Straubinger, T.L. ; Bickermann, M. ; Hofmann, D. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.25-28,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
43.

Conference Proceedings
Conference Proceedings
43. Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.33-36,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
44.

Conference Proceedings
Conference Proceedings
44. Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.49-52,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
45.

Conference Proceedings
Conference Proceedings
45. Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
Wellmann, P.J. ; Herro, Z. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.91-94,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
46.

Conference Proceedings
Conference Proceedings
46. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Bickermann, M. ; Weingartner, R. ; Hofmann, D. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.127-130,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
47.

Conference Proceedings
Conference Proceedings
47. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.139-142,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
49.

Conference Proceedings
Conference Proceedings
49. Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
Wellmann, P.J. ; Herro, Z. ; Selder, M. ; Durst, F. ; Pusche, R. ; Hundhausen, M. ; Ley, L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.9-12,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
50.

Conference Proceedings
Conference Proceedings
50. Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
Herro, Z.G. ; Epelbaum, B.M. ; Bickermann, M. ; Masri, P. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.95-98,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
51.

Conference Proceedings
Conference Proceedings
51. Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Bickermann, M. ; Hofmann, D. ; Straubinger, T.L. ; Weingartner, R. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.51-54,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
52.

Conference Proceedings
Conference Proceedings
52. Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thih Films Prepared by rf Magnetron Sputtering
Weingartner, R. ; Erlenbach, O. ; de Zela, F. ; Winnacker, A. ; Brauer, I. ; Strunk, H.P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.663-666,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
53.

Conference Proceedings
Conference Proceedings
53. Characterization of white-emitting copolymers for PLED displays (Invited Paper)
Buchhauser, D. ; Scheffel, M. ; Rogler, W. ; Tschamber, C. ; Heuser, K. ; Hunze, A. ; Gieres, G. ; Henseler, D. ; Jakowetz, W. ; Diekmann, K. ; Winnacker, A. ; Becker, H. ; Busing, A. ; Falcou, A. ; Rau, L. ; Vogele, S. ; Gottling, S.
Pub. info.: Organic Light-Emitting Materials and Devices VIII.  pp.70-81,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5519
54.

Conference Proceedings
Conference Proceedings
54. Trapping and charge transport in organic LEDs [5937-39]
Tschamber, C. A. ; Hunze, A. ; Buchhauser, D. ; Sarfert, W. ; Garditz, C. ; Weiβ, O. ; Patzold, R. ; Poplavskyy, D. ; Heuser, K. ; Winnacker, A.
Pub. info.: Organic Light-Emitting Materials and Devices IX.  pp.593718-593718,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5937
55.

Conference Proceedings
Conference Proceedings
55. OLED lighting based on white broadband copolymer emitters (Invited Paper) [5937-17]
Garditz, C. ; Paetzold, R. ; Buchhauser, D. ; Bathelt, R. ; Gieres, G. ; Tschamber, C. ; Hunze, A. ; Heuser, K. ; Winnacker, A. ; Amelung, J. ; Kunze, D.
Pub. info.: Organic Light-Emitting Materials and Devices IX.  pp.59370L-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5937