1.

Conference Proceedings
Conference Proceedings
1. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
Wellmann, P.J. ; Herro, Z. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.91-94,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
Desperrier, P. ; Mueller, R. ; Winnacker, A. ; Wellmann, P.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.727-730,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.645-648,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
Weingartner, R. ; Albrecht, A. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.341-344,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Bickermann, M. ; Weingartner, R. ; Herro, Z. ; Hofmann, D. ; Kunecke, U. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.337-340,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Weingartner, R. ; Bickermann, M. ; Herro, Z. ; Kunecke, U. ; Sakwe, S.A. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.333-336,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Wellmann, P.J. ; Hofmann, D. ; Kadinski, L. ; Selder, M. ; Straubinger, T.L. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.11-14,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Stability Criteria for 4H-SiC Bulk Growth
Straubinger, T.L. ; Bickermann, M. ; Hofmann, D. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.25-28,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356