1.

Conference Proceedings
Conference Proceedings
1. Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality
Hofmann, D. ; Eckstein, R. ; Kadinski, L. ; Kolbl, M. ; Muller, M. ; Muller, St. G. ; Schmitt, E. ; Weber, A. ; Winnacker, A.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Eckstein, R. ; Hofmann, D. ; Makarov, Y. ; Muller, St. G. ; Pensl, G. ; Schmitt, E. ; Winnacker, A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.215-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
3.

Conference Proceedings
Conference Proceedings
3. Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC
Muller, St. G. ; Hofmann, D. ; Winnacker, A.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.275-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572