1.

Conference Proceedings
Conference Proceedings
1. Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.371-378,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques
Oder, T. N. ; Tin, C. C. ; Williams, J. R. ; Isaacs-Smith, T. ; Madangarli, V. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.101-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
Chung, G. Y. ; Tin, C. C. ; Won, J. H. ; Williams, J. R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1097-1100,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Growth and Characterization of ZnO Nanonails
Seo, H. W. ; Wang, D. ; Tzeng, Y. ; Sathitsuksanoh, N. ; Tin, C. C. ; Bozack, M. J. ; Williams, J. R. ; Park, M.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.157-162,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 829
5.

Conference Proceedings
Conference Proceedings
5. Atomic-Scale Engineering of the SiC-SiO2 Interface
Pantelides, S. T. ; Duscher, G. ; Ventra, M. Di ; Buczko, R. ; McDonald, K. ; Huang, M. B. ; Weller, R. A. ; Baumvol, I. ; Stedile, F. C. ; Radtke, C. ; Pennycook, S. J. ; Chung, G. ; Tin, C. C. ; Williams, J. R. ; Won, J. ; Feldman, L. C.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1133-1136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)