1.

Conference Proceedings
Conference Proceedings
1. Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.371-378,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. Improved Nickel Silicide Ohmic Contacts to n-Type 4H and 6H-SiC Using Nichrome
Luckowski, E. D. ; Williams, J. R. ; Bozack, M. J. ; Isaacs-Smith, T. ; Crofton, J.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.119-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
3.

Conference Proceedings
Conference Proceedings
3. The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques
Oder, T. N. ; Tin, C. C. ; Williams, J. R. ; Isaacs-Smith, T. ; Madangarli, V. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.101-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512