Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.
Pub. info.:
Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.. pp.371-378, 2004. Warrendale, Pa.. Materials Research Society
Luckowski, E. D. ; Williams, J. R. ; Bozack, M. J. ; Isaacs-Smith, T. ; Crofton, J.
Pub. info.:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.119-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Oder, T. N. ; Tin, C. C. ; Williams, J. R. ; Isaacs-Smith, T. ; Madangarli, V. ; Sudarshan, T. S.
Pub. info.:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.101-, 1998. Warrendale, Penn.. MRS - Materials Research Society