1.

Conference Proceedings
Conference Proceedings
1. Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.371-378,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. Atomic-Scale Engineering of the SiC-SiO2 Interface
Pantelides, S. T. ; Duscher, G. ; Ventra, M. Di ; Buczko, R. ; McDonald, K. ; Huang, M. B. ; Weller, R. A. ; Baumvol, I. ; Stedile, F. C. ; Radtke, C. ; Pennycook, S. J. ; Chung, G. ; Tin, C. C. ; Williams, J. R. ; Won, J. ; Feldman, L. C.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1133-1136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers
Nigam, S. ; Kim, J. ; Luo, B. ; Ren, F. ; Chung, G. ; MacMillan, M. F. ; Williams, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.144-153,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14