1.

Conference Proceedings
Conference Proceedings
1. ENERGY AND DEPTH DISTRIBUTIONS OF INTERFACE STATES AND BULK TRAPS AND THEIR ELECTRONIC EFFECTS IN GaInAs/GaAs HETEROJUNCTIONS
Huang, Z. C. ; Wie, C. R. ; Johnstone, D. ; Stutz, C. E.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.633-642,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. PHOSPHORUS-VACANCY-RELATED DEEP LEVELS IN GaInP LAYERS GROWN BY MOLECULAR BEAM EPITAXY
Huang, Z. C. ; Wie, C. R. ; Varriano, J. A. ; Koch, M. W. ; Wicks, G. W.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.137-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
3.

Conference Proceedings
Conference Proceedings
3. CONTACT-RELATED DEEP STAGES IN Al-GaInP/GaAs INTERFACE
Huang, Z. C. ; Wie, C. R.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.209-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325