1.

Conference Proceedings
Conference Proceedings
1. The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
Weyer,G. ; Kringhaj,P. ; Freitag,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.271-276,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Evidence for High Vacancy Concentrations in Heavily Doped n-Type Silicon from Mossbauer Experiments
Weyer,G. ; Fanciulli,M. ; Freitag,K. ; Larsen,A.Nylandsted ; Lindroos,M. ; Muller,E. ; Vestergaard,H.C.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1117-1122,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201