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Conference Proceedings

1. High-quality GaN grown by molecular beam epitaxy on Ge(001)

Siegle, H. ; Kim, Y. ; Sudhir, G. S. ; Kruger, J. ; Perlin, P. ; Ager III, J. W. ; Kisielowski, C. ; Weber, E. R.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.451-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

2. MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant

Klockenbrink, R. ; Kim, Y. ; Leung, M. S. H. ; Kisielowski, C. ; Kruger, J. ; Sudhir, G. S. ; Rubin, M. ; Weber, E. R.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.75-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

3. Stress-Controlled MBE Growth of GaN:Mg and GaN:Si

Kim, Y. ; Klockenbrink, R. ; Kisielowski, C. ; Kruger, J. ; Corlatan, D. ; Sudhir, G. S. ; Peyrot, Y. ; Cho, Y. ; Rubin, M. ; Weber, E. R.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.217-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

4. Effect of Mg, Zn, Si, and O on the Lattice Constant of Gallium Nitride Thin Films

Sudhir, G. S. ; Peyrot, Y. ; Kruger, J. ; Kim, Y. ; Klockenbrink, R. ; Kisielowski, C. ; Rubin, M. D. ; Weber, E. R. ; Kriegseis, W. ; Meyer, B. K.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.525-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482