1.

Conference Proceedings
Conference Proceedings
1. GENERATION OF DEFECTS AND STRAIN BY ION IMPLANTATION IN Ge(100) SINGLE CRYSTALS, AND IN PSEUDOMORPHIC GeXSi1-X FILMS GROWN ON Si(100)
Lie, D. Y. C. ; Vantomme, A. ; Eisen, F. ; Nicolet, M.-A. ; Arbet-Engets, V. ; Wang, K. L.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1079-1084,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
2.

Conference Proceedings
Conference Proceedings
2. Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation from 40 to 150 °C
Vantomme, A. ; Song, J. H. ; Lie, D. Y. C. ; Eisen, F. H. ; Nicolet, M. -A. ; Carns, T. K. ; Wang, K. L.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.121-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326