1.

Conference Proceedings
Conference Proceedings
1. Thickness Dependence of Electronic Properties of GaN Epilayers
Gotz, W. ; Walker, J. ; Romano, L. T. ; Johnson, N. M. ; Molnar, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.525-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Activation of Acceptors in Mg-Doped, p-Type GaN
Gotz, W. ; Johnson, N. M. ; Walker, J. ; Bour, D. P.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.595-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423