1.

Conference Proceedings
Conference Proceedings
1. Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node
W. Cheng ; A. Teramoto ; T. Ohmi
Pub. info.: ULSI process integration 5.  pp.349-355,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(6)
2.

Conference Proceedings
Conference Proceedings
2. Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface
W. Cheng ; A. Teramoto ; C. Tye ; P. Gaubert ; M. Hirayama ; S. Sugawa ; T. Ohmi
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.101-106,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
3.

Conference Proceedings
Conference Proceedings
3. Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage
R. Kuroda ; A. Teramoto ; W. Cheng ; S. Sugawa ; T. Ohmi
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.113-120,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)