1.

Conference Proceedings
Conference Proceedings
1. SURFACE CHARACTERISATION OF Si AFTER HF TREATMENTS AND ITS INFLUENCE ON THE DIELECTRIC BREAKDOWN OF THERMAL OXIDES
Verhaverbeke, S. ; Alay, J. ; Mertens, P. ; Meuris, M. ; Heyns, M. ; Vandervorst, W. ; Murrell, M. ; Sofield, C.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.391-398,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
2.

Conference Proceedings
Conference Proceedings
2. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
4.

Conference Proceedings
Conference Proceedings
4. Influence of pre and post process conditions on the composition of thin Si3N4 thin films (3 nm) studied by XPS and TOFSIMS
Conard, T. ; Witte, H. De ; Vandervorst, W. ; Houssa, M. ; Heyns, M. ; Pomarede, C. ; Werkhoven, C.
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.69-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
5.

Conference Proceedings
Conference Proceedings
5. Thermal Stability of High-k Layers
Zhao, C. ; Cosnier, V. ; Chen, P.J. ; Richard, O. ; Roebben, G. ; Maes, J. ; Elshocht, S.Van ; Bender, H. ; Young, E. ; Biest, O.Van Der ; Caymax, M. ; Vandervorst, W. ; Gendt, S.De ; Heyns, M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.9-14,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
6.

Conference Proceedings
Conference Proceedings
6. High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies
Caymax, Matty ; Bender, H. ; Brijs, B. ; Conard, T. ; Gendt, S. De ; Delabie, A. ; Heyns, M. ; Onsia, B. ; Ragnarsson, L. ; Richard, O. ; Vandervorst, W. ; Elshocht, S. Van ; Zhao, C. ; Maes, J. W. ; Date, L. ; Pique, D. ; Young, E. ; Tsai, W. ; Shimamoto, Y.
Pub. info.: CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.47-58,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 765
7.

Conference Proceedings
Conference Proceedings
7. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
8.

Conference Proceedings
Conference Proceedings
8. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809