1.

Conference Proceedings
Conference Proceedings
1. ANNEALING CHARACTERISTICS OF LOW TEMPERATURE GROWN GaAs:Be
Bliss, D.E. ; Walukiewicz, W. ; Chan, K.T. ; Ager, III., J.W. ; Tanigawa, S. ; Haller, E.E.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.93-100,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
2.

Conference Proceedings
Conference Proceedings
2. SIMILARITY OF VACANCY CREATION MECHANISMS IN Si DOPED GaAs AND Ga DOPED ZnSe OBSERVED BY A MONOENERGETIC POSITRON BEAM
Tanigawa, S. ; Lee, J. L. ; Kawabe, M. ; Miyajima, T. ; Okuyama, H. ; Akimoto, K. ; Mori, Y
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.597-602,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
3.

Conference Proceedings
Conference Proceedings
3. THE LACK OF TRAPPING CENTERS FOR POSITRONS AT THE INTERFACE OF W/Si SYSTEM AND THE INVESTIGATION OF THE DEPLETON LAYER IN THE SCHOTTKY BARRIER BY POSITIONS AS TEST CHARGE SIMULATING HOLES
Tanigawa, S. ; Tabuki, Y. ; Wei, L. ; Hinode, K. ; Kobayashi, N. ; Onail, T. ; Owada, N.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.307-312,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. DEFECT ANNIHILATION IN CZOCHRALSKI-GROWN SILICON DURING OUT-DIFFUSION PROCESS PROBED WITH VARIABLE-ENERGY POSITRON BEAM
Kitano, T. ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Mikoshiba, H.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.707-712,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
5.

Conference Proceedings
Conference Proceedings
5. DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM
Uedeno, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Y ; Tanigawa, S. ; Sugiura, J. ; Ogasawara, M. ; Tamura, M,
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1061-1066,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
6.

Conference Proceedings
Conference Proceedings
6. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM
Kametani, H. ; Akiyama, H. ; Yamaguchi, Y. ; Koumaru, M, ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Uedono, A. ; Watauchi, S. ; Ujihira, Y. ; Suzuki, R. ; Ohgaki, H. ; Mikado, T.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.235-240,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
7.

Conference Proceedings
Conference Proceedings
7. CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tanigawa, S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
8.

Conference Proceedings
Conference Proceedings
8. THE STUDY OF Si, Se AND O-IMPLANTED GaAs BY SLOW POSITRONS
Fujii, S. ; Shikata, S. ; Wei, L. ; Tanigawa, S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.343-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
9.

Conference Proceedings
Conference Proceedings
9. POINT DEFECT ASSISTED CRYSTAL GROWTH ON BULK ZnSe
Terashima, K. ; Tokizaki, E. ; Kondo, H. ; Tanigawa, S. ; Uedono, A ; Watauchi, S. ; Ujihira, Y.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.111-116,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
10.

Conference Proceedings
Conference Proceedings
10. THE INTERFACIAL REACTIONS IN Ti/Si AND Ni/Si SYSTEMS OBSERVED BY A MONOENERGETIC POSITRON BEAM
Tanigawa, S. ; Wei, Long ; Tabuki, Yasushi
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.319-324,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
11.

Conference Proceedings
Conference Proceedings
11. Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon
Watanabe, M. ; Kitano, T. ; Asada, S. ; Uedono, A. ; Moriya, T. ; Kawano, T. ; Tanigawa, S. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
Pub. info.: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.95-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 439
12.

Conference Proceedings
Conference Proceedings
12. Creation and Annealing Out Mechanisms of Defects in Ion-Implanted Si Crystals Investigated by Positron Annihilation
Tanigawa, S.
Pub. info.: Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.287-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 470
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Conference Proceedings
Conference Proceedings
13. Annealing Properties of Defects in BF2+ Implanted Si
Kitano, T. ; Watanabe, M. ; Yaoita, A. ; Oguro, S. ; Uedono, A. ; Moriya, T. ; Tanigawa, S. ; Kawano, T. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
Pub. info.: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.137-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 438
14.

Conference Proceedings
Conference Proceedings
14. Effects of Vacancy-Type Defects on Electrical Activation of P+ Implanted Into Silicon
Watanabe, M. ; Kitano, T. ; Asada, S. ; Uedono, A. ; Moriya, T. ; Kawano, T. ; Tanigawa, S. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
Pub. info.: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.131-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 438
15.

Conference Proceedings
Conference Proceedings
15. Annealing Properties of Defects in BF2+-Implanted Si
Kitano, T. ; Watanabe, M. ; Yaoita, A. ; Oguro, S. ; Uendno, A. ; Moriya, T. ; Tanigawa, S. ; Kawano, T. ; Suzuki, R. ; Ohdaira, T. ; Mikado, T.
Pub. info.: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.143-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 439
16.

Conference Proceedings
Conference Proceedings
16. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
17.

Conference Proceedings
Conference Proceedings
17. Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
Uedono, A. ; Watanabe, M. ; Ichihashi, T. ; Takasu, S. ; Muramatsu, M. ; Ubukata, T. ; Tanino, H. ; Shiraishi, T. ; Tanigawa, S.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.472-474,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
18.

Conference Proceedings
Conference Proceedings
18. Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Chen, Z.Q. ; Suzuki, T. ; Uedono, A. ; Tanigawa, S. ; Ito, Y.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.297-299,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365