1.

Conference Proceedings
Conference Proceedings
1. THE LACK OF TRAPPING CENTERS FOR POSITRONS AT THE INTERFACE OF W/Si SYSTEM AND THE INVESTIGATION OF THE DEPLETON LAYER IN THE SCHOTTKY BARRIER BY POSITIONS AS TEST CHARGE SIMULATING HOLES
Tanigawa, S. ; Tabuki, Y. ; Wei, L. ; Hinode, K. ; Kobayashi, N. ; Onail, T. ; Owada, N.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.307-312,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
2.

Conference Proceedings
Conference Proceedings
2. DEFECT ANNIHILATION IN CZOCHRALSKI-GROWN SILICON DURING OUT-DIFFUSION PROCESS PROBED WITH VARIABLE-ENERGY POSITRON BEAM
Kitano, T. ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Mikoshiba, H.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.707-712,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
3.

Conference Proceedings
Conference Proceedings
3. DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM
Uedeno, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Y ; Tanigawa, S. ; Sugiura, J. ; Ogasawara, M. ; Tamura, M,
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1061-1066,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM
Kametani, H. ; Akiyama, H. ; Yamaguchi, Y. ; Koumaru, M, ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Uedono, A. ; Watauchi, S. ; Ujihira, Y. ; Suzuki, R. ; Ohgaki, H. ; Mikado, T.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.235-240,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
5.

Conference Proceedings
Conference Proceedings
5. CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tanigawa, S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
6.

Conference Proceedings
Conference Proceedings
6. THE STUDY OF Si, Se AND O-IMPLANTED GaAs BY SLOW POSITRONS
Fujii, S. ; Shikata, S. ; Wei, L. ; Tanigawa, S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.343-348,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262