1.

Conference Proceedings
Conference Proceedings
1. MOCVD GROWTH OF GaAs ON Si WITH LOW TEMPERATURE PREHEATING PROCESS
Takagi, N. ; Eshita, T. ; Miyagaki, S. ; Kimura, M. ; Takasaki, K.
Pub. info.: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.305-310,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 259
2.

Conference Proceedings
Conference Proceedings
2. CRYSTAL QUALITY AND SURFACE MORPHOLOGY IMPROVEMENT OF MOVPE-GROWN GaAs-ON-Si USING TERTIARYBUTYLARSINE
Miyagaki, S. ; Ohkubo, S. ; Takai, K. ; Takagi, N. ; Kimura, M. ; Kikuchi, Y. ; Eshita, T. ; Takasaki, K.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.345-350,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
3.

Conference Proceedings
Conference Proceedings
3. MOVPE GROWTH OF GaAs ON Si USING TERTIARYBUTYLARSINE
Miyagaki, S. ; Ohkubo, S. ; Takai, K. ; Takagi, N. ; Kimura, M. ; Kikuchi, Y. ; Eshita, T. ; Takasaki, K.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.209-214,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263