1.

Conference Proceedings
Conference Proceedings
1. Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
M.R. Jennings ; A. Perez-Tomas ; D. Walker ; L. Zhu ; P.A. Losee ; W. Huang ; S. Balachandran ; O.J. Guy ; J.A. Covington ; T.P. Chow ; P.A. Mawby
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.697-700,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
Y. Wang ; P.A. Losee ; S. Balachandran ; I. Bhat ; T.P. Chow ; B.J. Skromme ; J.K. Kim ; E.F. Schubert
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.567-570,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
K. Yamamoto ; S. Chowdhury ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.713-716,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
S. Chowdhury ; C. Hitchcock ; R. Dahal ; I.B. Bhat ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.954-957,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
S. Chowdhury ; K. Yamamoto ; C. Hitchcock ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.500-503,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
6.

Conference Proceedings
Conference Proceedings
6. Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
H. Naik ; Z. Li ; H. Issa ; Y.L. Tian ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.769-772,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs
H. Naik ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.595-598,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
8.

Conference Proceedings
Conference Proceedings
8. Optimization of 4H-SiC MOS Properties with Cesium Implantation
Y. Wang ; T. Khan ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.751-754,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
H. Naik ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.678-681,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
10.

Conference Proceedings
Conference Proceedings
10. Progress in GaN MOSFET Technology
T.P. Chow ; W. Huang ; T. Khan ; K. Matocha ; Y. Wang
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1263-1268,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
11.

Conference Proceedings
Conference Proceedings
11. SiC and GaN MOS Interfaces - Similarities and Differences
T.P. Chow
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.473-478,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
12.

Conference Proceedings
Conference Proceedings
12. Progress in High Voltage SiC and GaN Power Switching Devices
T.P. Chow
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1077-1082,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
13.

Conference Proceedings
Conference Proceedings
13. Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
H. Naik ; K. Tang ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.773-776,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
14.

Conference Proceedings
Conference Proceedings
14. Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates
H. Naik ; K. Tang ; T. Marron ; T.P. Chow ; J.A. Fronheiser
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.785-788,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
15.

Conference Proceedings
Conference Proceedings
15. Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
S. Chowdhury ; K. Yamamoto ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.635-638,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
16.

Conference Proceedings
Conference Proceedings
16. 4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
H. Naik ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.607-610,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
17.

Conference Proceedings
Conference Proceedings
17. Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
H. Naik ; Z. Li ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.519-522,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
18.

Conference Proceedings
Conference Proceedings
18. Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC
Z. Stum ; Y. Tang ; H. Naik ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.467-470,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
19.

Conference Proceedings
Conference Proceedings
19. Comparison of 600V Si, SiC and GaN Power Devices
S. Chowdhury ; Z. Stum ; Z.D. Li ; K. Ueno ; T.P. Chow
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.971-974,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
20.

Conference Proceedings
Conference Proceedings
20. Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
S. Chowdhury ; C.W. Hitchcock ; T.P. Chow
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.545-548,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
21.

Conference Proceedings
Conference Proceedings
21. Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers
R. Dahal ; S. Chowdhury ; C.W. Hitchcock ; T.P. Chow ; I.B. Bhat
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.379-382,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897