1.

Conference Proceedings
Conference Proceedings
1. Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
K. Seki ; S. Harada ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.311-314,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
S. Kozawa ; K. Seki ; Y. Yamamoto ; T. Ujihara ; Y. Takeda
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.28-31,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
K. Seki ; S. Kozawa ; Y. Yamamoto ; T. Ujihara ; Y. Takeda
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.24-27,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
T. Ujihara ; S. Kozawa ; K. Seki ; Y. Yamamoto ; S. Harada
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.351-354,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
Y. Yamamoto ; K. Seki ; S. Kozawa ; S. Harada ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.53-56,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
K. Seki ; R. Tanaka ; T. Ujihara ; Y. Takeda
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.27-30,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
R. Tanaka ; K. Seki ; T. Ujihara ; Y. Takeda
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.37-40,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents
R. Tanaka ; K. Seki ; S. Komiyama ; T. Ujihara ; Y. Takeda
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.59-62,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent
S. Harada ; Y. Yamamoto ; S.Y. Xiao ; M. Tagawa ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.67-70,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC
T. Umezaki ; D. Koike ; A. Horio ; S. Harada ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.63-66,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
11.

Conference Proceedings
Conference Proceedings
11. Stability Growth Condition for 3C-SiC Crystals by Solution Technique
T. Ujihara ; R. Maekawa ; R. Tanaka ; K. Sasaki ; K. Kuroda
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.63-66,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
12.

Conference Proceedings
Conference Proceedings
12. Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
T. Umezaki ; D. Koike ; S. Harada ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.31-34,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
13.

Conference Proceedings
Conference Proceedings
13. 4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
T. Mitani ; N. Komatsu ; T. Takahashi ; T. Kato ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.9-13,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
14.

Conference Proceedings
Conference Proceedings
14. 3C-SiC Crystal on Sapphire by Solution Growth Method
K. Shibata ; S. Harada ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.185-188,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
15.

Conference Proceedings
Conference Proceedings
15. Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
S. Harada ; Y. Yamamoto ; K. Seki ; T. Ujihara
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.189-192,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
16.

Conference Proceedings
Conference Proceedings
16. Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
K. Seki ; K. Morimoto ; T. Ujihara ; T. Tokunaga ; K. Sasaki
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.363-366,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
17.

Conference Proceedings
Conference Proceedings
17. Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
T. Hori ; K. Murayama ; S. Harada ; S. Xiao ; M. Tagawa ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.28-31,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
18.

Conference Proceedings
Conference Proceedings
18. SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
K. Murayama ; T. Hori ; S. Harada ; S. Xiao ; M. Tagawa ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.24-27,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
19.

Conference Proceedings
Conference Proceedings
19. Solvent Design for High-Purity SiC Solution Growth
S. Harada ; G. Hatasa ; K. Murayama ; T. Kato ; M. Tagawa ; T. Ujihara
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.32-38,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
20.

Conference Proceedings
Conference Proceedings
20. Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation
R. Tero ; T. Ujihara ; T. Urisu
Pub. info.: Nanosensing : materials, devices and systems III : 11-12 September 2007, Boston, Massachusetts, USA.  pp.67690J-1-67690J-12,  2007.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6769