1.

Conference Proceedings
Conference Proceedings
1. Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
J. Röhrl ; M. Hundhausen ; K.V. Emtsev ; T. Seyller ; L. Ley
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.567-570,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
J. Röhrl ; M. Hundhausen ; F. Speck ; T. Seyller
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.603-606,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
3.

Conference Proceedings
Conference Proceedings
3. Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
F. Fromm ; M. Hundhausen ; M. Kaiser ; T. Seyller
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1166-1169,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780