1.

Conference Proceedings
Conference Proceedings
1. The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
S. Ushio ; A. Adachi ; K. Matsuda ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.777-780,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
S. Ushio ; T. Karaki ; K. Hagiwara ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.573-576,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
S. Ushio ; K. Nakanishi ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.577-580,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
K. Ashida ; T. Kajino ; Y. Kutsuma ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.507-510,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
K. Ohtomo ; N. Matsumoto ; K. Ashida ; T. Kaneko ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.189-192,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
Y. Tabuchi ; M. Sonoda ; K. Ashida ; T. Kaneko ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.205-208,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897