1.

Conference Proceedings
Conference Proceedings
1. Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
H. Tsuge ; S. Ushio ; S. Sato ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.7-10,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
C. Taniguchi ; A. Ichimura ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.109-112,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
K. Tani ; T. Fujimoto ; K. Kamei ; K. Kusunoki ; K. Seki
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.73-76,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Structural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single Crystals
S. Sato ; T. Fujimoto ; H. Tsuge ; M. Katsuno ; M. Nakabayashi
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.97-100,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals
M. Katsuno ; T. Fujimoto ; H. Yashiro ; H. Tsuge ; S. Sato
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.355-358,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
S. Sato ; T. Fujimoto ; H. Tsuge ; M. Katsuno ; W. Ohashi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.411-414,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
H. Yashiro ; T. Fujimoto ; N. Ohtani ; T. Hoshino ; M. Katsuno
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.819-822,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
M. Nakabayashi ; T. Fujimoto ; M. Katsuno ; N. Ohtani ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.3-6,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
M. Katsuno ; M. Nakabayashi ; T. Fujimoto ; N. Ohtani ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.341-344,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
10.

Conference Proceedings
Conference Proceedings
10. High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
N. Ohtani ; M. Katsuno ; T. Fujimoto ; S. Sato ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.489-492,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
11.

Conference Proceedings
Conference Proceedings
11. Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
T. Takahashi ; C. Ohshige ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.90-95,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
12.

Conference Proceedings
Conference Proceedings
12. Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
T. Aigo ; H. Tsuge ; H. Yashiro ; T. Fujimoto ; M. Katsuno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.119-122,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
13.

Conference Proceedings
Conference Proceedings
13. Comparative Study of Defects in 4H-SiC Epilayers Grown on 4° Off-Axis (0001) and (000-1) Substrates
T. Aigo ; W. Itoh ; T. Fujimoto ; T. Yano
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.143-146,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
14.

Conference Proceedings
Conference Proceedings
14. Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
M. Nakabayashi ; T. Fujimoto ; M. Katsuno ; H. Tsuge ; T. Aigo
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.9-12,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
15.

Conference Proceedings
Conference Proceedings
15. Mechanical Properties of Fe-Pd Ferromagnetic Shape Memory Alloy Thin Films Prepared by Dual Source DC Sputtering
S. Inoue ; T. Namazu ; T. Fujimoto ; K. Koterazawa ; K. Inoue
Pub. info.: THERMEC 2006 : supplement to THERMEC 2006, 5th International conference on processing and manufacturing of advanced materials, July 4-8, 2006, Vancouver, Canada.  539-543  pp.3173-3178,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 539-543(4)
16.

Conference Proceedings
Conference Proceedings
16. Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
T. Fujimoto ; N. Ohtani ; S. Sato ; M. Katsuno ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.21-24,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
17.

Conference Proceedings
Conference Proceedings
17. Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals
H. Tsuge ; S. Sato ; M. Katsuno ; T. Fujimoto ; W. Ohashi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.13-16,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
18.

Conference Proceedings
Conference Proceedings
18. Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
T. Yamaguchi ; S. Sato ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.64-67,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
19.

Conference Proceedings
Conference Proceedings
19. Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
M. Katsuno ; N. Ohtani ; M. Nakabayashi ; T. Fujimoto ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.311-314,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
20.

Conference Proceedings
Conference Proceedings
20. Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
T. Fujimoto ; T. Aigo ; M. Nakabayashi ; S. Satoh ; M. Katsuno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.319-322,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
21.

Conference Proceedings
Conference Proceedings
21. Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
S. Ushio ; T. Fujimoto ; H. Tsuge ; M. Katsuno ; S. Sato
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.390-393,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
22.

Conference Proceedings
Conference Proceedings
22. Effects of Material Property and Structural Design on the Stress Reduction of the Joints in Electronics Devices
M. Matsushima ; N. Nakashima ; T. Fujimoto ; S. Fukumoto ; K. Fujimoto
Pub. info.: THERMEC 2013 : Selected, peer reviewed papers from the 8th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS Processing, Fabrication, Properties, Applications, December 2-6, 2013, Las Vegas, USA.  pp.2765-2770,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 783-786
23.

Conference Proceedings
Conference Proceedings
23. A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
T. Fujimoto ; H. Tsuge ; M. Katsuno ; S. Sato ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.577-580,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
24.

Conference Proceedings
Conference Proceedings
24. Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
M. Nakabayashi ; T. Fujimoto ; H. Tsuge ; K. Kojima ; K. Abe
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.453-456,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
25.

Conference Proceedings
Conference Proceedings
25. Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
K. Ohtomo ; N. Matsumoto ; K. Ashida ; T. Kaneko ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.189-192,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
26.

Conference Proceedings
Conference Proceedings
26. SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
Y. Tabuchi ; M. Sonoda ; K. Ashida ; T. Kaneko ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.205-208,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
27.

Conference Proceedings
Conference Proceedings
27. Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen- Doped 4H-SiC Substrate
D. Fukunaga ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.283-286,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
28.

Conference Proceedings
Conference Proceedings
28. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
T. Tawara ; T. Miyazawa ; M. Ryo ; M. Miyazato ; T. Fujimoto ; K. Takenaka ; S. Matsunaga ; M. Miyajima ; A. Otsuki ; Y. Yonezawa ; T. Kato ; H. Okumura ; T. Kimoto ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.419-422,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
29.

Conference Proceedings
Conference Proceedings
29. Mobile video communications techniques and services
H. Ibaraki ; T. Fujimoto ; S. Nakano
Pub. info.: Visual communications and image processing '95 : 24-26 May 1995, Taipei, Taiwan.  pp.1024-1033,  1995.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2501
30.

Technical Paper
Technical Paper
30. Non-Ideal MHD Effect in the Flow Field of Magneto Plasma Sail
T. Fujimoto ; H. Otsu ; I. Funaki ; Y. Yamagiwa
Pub. info.: AIAA meeting papers on disc.  2009.  Reston, Va..  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : Aerospace Sciences Meeting and Exhibit
Ser. no.: 2009
31.

Conference Proceedings
Conference Proceedings
31. Diode-pumped solid state laser for spaceborne water vapor DIAL
O. Uchino ; T. Nagai ; T. Fujimoto ; C. Nagasawa ; M. Abo
Pub. info.: Lidar techniques for remote sensing ll : 25-26 September 1995, Paris, France.  pp.154-160,  1995.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2581
32.

Conference Proceedings
Conference Proceedings
32. Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis
C. Ohshige ; T. Takahashi ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.43-46,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
33.

Conference Proceedings
Conference Proceedings
33. Atomic layer deposition of atomic mirror for silicon
T. Fujimoto ; Y. Shiomi ; H. Kumagai ; A. Kobayashi
Pub. info.: Photon processing in microelectronics and photonics VI : 22-25 January 2007, San Jose, California, USA.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6458
34.

Conference Proceedings
Conference Proceedings
34. Titanium oxide/nickel oxide multilayer mirror for attosecond soft x rays
Y. Masuda ; T. Fujimoto ; H. Kumagai ; A. Kobayashi
Pub. info.: Optical components and materials V : 21-23 January 2008, San Jose, California, USA.  pp.68900T-1-68900T-11,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6890