1.

Conference Proceedings
Conference Proceedings
1. Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
C. Taniguchi ; A. Ichimura ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.109-112,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
H. Yashiro ; T. Fujimoto ; N. Ohtani ; T. Hoshino ; M. Katsuno
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.819-822,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
M. Nakabayashi ; T. Fujimoto ; M. Katsuno ; N. Ohtani ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.3-6,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
M. Katsuno ; M. Nakabayashi ; T. Fujimoto ; N. Ohtani ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.341-344,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
N. Ohtani ; M. Katsuno ; T. Fujimoto ; S. Sato ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.489-492,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
T. Takahashi ; C. Ohshige ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.90-95,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
T. Fujimoto ; N. Ohtani ; S. Sato ; M. Katsuno ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.21-24,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
T. Yamaguchi ; S. Sato ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.64-67,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
9.

Conference Proceedings
Conference Proceedings
9. Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
M. Katsuno ; N. Ohtani ; M. Nakabayashi ; T. Fujimoto ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.311-314,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
K. Ohtomo ; N. Matsumoto ; K. Ashida ; T. Kaneko ; N. Ohtani ; M. Katsuno ; S. Sato ; H. Tsuge ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.189-192,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897