1.

Conference Proceedings
Conference Proceedings
1. Epitaxy on GaN bulk crystals
Leszczynski,M. ; Prystawko,P. ; Czernecki,R. ; Lehnert,J. ; Perlin,P. ; Wisniewski,P. ; Skierbiszewski,Cz. ; Suski,T. ; Nowak,G. ; Karouta,F. ; Holst,J. ; Grzegory,I. ; Porowski,S.
Pub. info.: International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland.  pp.11-15,  2000.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4413
2.

Conference Proceedings
Conference Proceedings
2. Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AIGaAs Heterostructures
Wisniewski,P. ; Suski,T. ; Dmowski,L.H. ; Gorczyca,I. ; Sobkowicz,P. ; Smoliner,J. ; Gornik,E. ; Bohm,G. ; Weimann,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.617-622,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Coexistence of Two Localized States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
Skierbiszewski,C. ; Wisniewski,P. ; Suski,T. ; Wilamowski,Z. ; Ostermayer,G. ; Jantsch,W. ; Walker,P. ; Mason,N.J. ; Singleton,J.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1013-1018,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Correlated Charged Donors in GaAs/AlGaAs Quantum Well:Quantum- and Mobility-Scattering Times
Suski,T. ; Wisniewski,P. ; Litwin-Staszewska,E. ; Skierbiszewski,C. ; Brunthaler,G. ; Kohler,K.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.443-448,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Pressure Studies of "Resonant" Metastable Localized Electron State in Heavily Doped O-GaAs
Dmowski,L. ; Wasik,D. ; Litwin-Staszewska,E. ; Suski,T. ; Wisniewski,P. ; Zhuang,W.H.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.493-498,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41