1.

Conference Proceedings
Conference Proceedings
1. X-RAY DIFFRACTION STUDIES OF LOW TEMPERATURE GaAs
Kowalski, G. ; Leszczynski, M. ; Kurpiewski, A. ; Kaminska, M. ; Suski, T. ; Weber, E.R.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.125-130,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
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Conference Proceedings
Conference Proceedings
2. Recent Results in High Pressure Growth of GaN Single Crystals
Krukowski, S. ; Bockowski, M. ; Grzegory, I. ; Lucznik, B. ; Nowak, G. ; Wroblewski, M. ; Leszczyaski, M. ; Teissevre, G. ; Suski, T. ; Porowski, S.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.189-200,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
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Conference Proceedings
Conference Proceedings
3. X-ray Absorption and Reflection as Probes of the GaN Conduction Bands: Theory and Experiment of the N-K-Edge and Ga M2,3 Edges
Lambrecht, W. R. L. ; Rashkeev, S. N. ; Segall, B. ; Lawniczak-Jablonska, K. ; Suski, T. ; Gullikson, E. M. ; Underwood, J. H. ; Perera, R. C. C. ; Rife, J. C.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.881-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
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Conference Proceedings
Conference Proceedings
4. The use of micro-raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Kuball, M. ; Mayes, J. M. ; Suski, T. ; Jun, J. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.46.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
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Conference Proceedings
Conference Proceedings
5. GaN Crystals: Growth and Doping Under Pressure
Grzegory, I. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; Krukowski, S. ; Weyher, J. ; Nowak, G. ; Suski, T. ; Leszczynski, M. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.15-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
McCluskey, M. D. ; Romano, L. T. ; Krusor, B. S. ; Hofstetter, D. ; Bour, D. P. ; Kneissl, M. ; Johnson, N. M. ; Suski, T. ; Jun, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.42.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
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Conference Proceedings
Conference Proceedings
7. Observation of Native Ga Vacancies in GaN by Positron Annihilation
Saarinen, K. ; Laine, T. ; Kuisma, S. ; Nissila, J. ; Hautojarvi, P. ; Dobrzynski, L. ; Baranowski, J. M. ; Pakula, K. ; Stepniewski, R. ; Wojdak, M. ; Wysmolek, A. ; Suski, T. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.757-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
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Conference Proceedings
Conference Proceedings
8. Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
Leszczynski, M. ; Bak-Misiuk, J. ; Domagala, J. ; Suski, T.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.311-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
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Conference Proceedings
Conference Proceedings
9. GaN Homoepitaxy for Device Applications
Kamp, M. ; Kirchner, C. ; Schwegler, V. ; Pelzmann, A. ; Ebeling, K. J. ; Leszczynski, M. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
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Conference Proceedings
Conference Proceedings
10. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
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Conference Proceedings
Conference Proceedings
11. Effect of Si Doping on the Structure of GaN
Liliental-Weber, Zuzanna ; Ruvimov, S. ; Suski, T. ; Ager, J. W., III ; Swider, W. ; Chen, Y. ; Kisielowski, Ch. ; Washburn, J. ; Akasaki, I. ; Amano, H. ; Kuo, C. ; Imler, W.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.487-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
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Conference Proceedings
Conference Proceedings
12. Properties of Homoepitaxially MBE-Grown GaN
Suski, T. ; Krueger, J. ; Kisielowski, C. ; Phatak, P. ; Leung, M. S. H. ; Liliental-Weber, Z. ; Gassmann, A. ; Newman, N. ; Rubin, M. D. ; Weber, E. R. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Helava, H. I.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.329-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
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Conference Proceedings
Conference Proceedings
13. Localized Donors in GaN: Spectroscopy Using Large Pressures
Wetzel, C. ; Amano, H. ; Akasaki, I. ; Suski, T. ; Ager, J. W. ; Weber, E. R. ; Haller, E. E. ; Meyer, B. K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.489-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
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Conference Proceedings
Conference Proceedings
14. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
15.

Conference Proceedings
Conference Proceedings
15. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
16.

Conference Proceedings
Conference Proceedings
16. High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.429-434,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
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Conference Proceedings
Conference Proceedings
17. Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Perlin, Piotr ; Leszczynski, M. ; Prystawko, P. ; Czernecki, R. ; Nowak, G. ; Wisniewski, P. ; Dmowski, L. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Suski, T. ; Grzegory, I. ; Porowski, S. ; Ivanov, V.Yu. ; Godlewski, M. ; Holst, J. ; Hoffman, A.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.289-294,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
18.

Conference Proceedings
Conference Proceedings
18. Comprehensive Study of Anomalous Conduction Band Structure of InxGa1-xAs1-yNy
Skierbiszewski, C. ; Perlin, P. ; Wisniewski, P. ; Presz, A. ; Suski, T. ; Geisz, J. ; Jantsch, W. ; Mars, D.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
19.

Conference Proceedings
Conference Proceedings
19. Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy
Perlin, P. ; Suski, T. ; Polian, A. ; Chervin, J. C. ; Knap, W. ; Camassel, J. ; Grzegory, I. ; Porowski, S. ; Erickson, J. W.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.689-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
20.

Conference Proceedings
Conference Proceedings
20. The Effect of Pressure on Carrier Scattering in Semiconductors
Suski, T. ; Trzeciakowski, W. ; Porowski, S.
Pub. info.: Collective phenomena and transport properties.  pp.317-320,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 22(1)
21.

Conference Proceedings
Conference Proceedings
21. Universal Behavior of the Pressure Coefficient of the Light Absorption and Emission in InGaN Structures
Perlin, P. ; Suski, T. ; Wisniewski, P. ; Gorczyca, I. ; Lepkowski, S. ; Hansen, M. ; DenBaars, S.P. ; Damilano, B. ; Grandjean, N. ; Massie, J.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
22.

Conference Proceedings
Conference Proceedings
22. Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells
Suski, T. ; Perlin, P. ; Lepkowski, S.P. ; Teisseyre, H. ; Gorczyca, I. ; Prystawko, P. ; Leszczynski, M. ; Grandjean, N. ; Massies, J. ; Kitamura, T. ; Ishida, Y. ; Chichibu, S.F. ; Okumura, H.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.487-500,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
23.

Conference Proceedings
Conference Proceedings
23. Properties of bulk Gallium Nitride crystals
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Potowski, S. ; Lilenthal-Weber, Z.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.46-57,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
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Conference Proceedings
Conference Proceedings
24. Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films
Ager, J. W., III ; Suski, T. ; Ruvimov, S. ; Kruger, J. ; Conti, G. ; Weber, E. R. ; Bremser, M. D. ; Davis, R. ; Kuo, C. P.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.775-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
25.

Conference Proceedings
Conference Proceedings
25. Growth and Properties of Bulk Single Crystals of GaN
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Pakula, K. ; Wysmolek, A. ; Baranowski, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.15-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
26.

Conference Proceedings
Conference Proceedings
26. Defect Studies of GaN Under Large Hydrostatic Pressure
Wetzel, C. ; Fischer, S. ; Walukiewicz, W. ; Ager, J., III ; Haller, E. E. ; Grzegory, I. ; Porowski, S. ; Suski, T.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.417-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
27.

Conference Proceedings
Conference Proceedings
27. Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides (Invited Paper) [6121-24]
Suski, T. ; Franssen, G. ; Perlin, P. ; Teisseyre, H. ; Kaminska A
Pub. info.: Gallium Nitride Materials and Devices.  pp.61210O-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121
28.

Conference Proceedings
Conference Proceedings
28. High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates
Perlin, P. ; Leszczynski, M. ; Prystawko, P. ; Czernetzki, R. ; Wisniewski, P. ; Weyher, J.L. ; Nowak, G. ; Borysiuk, J. ; Gorczyca, L. ; Swietlik, T. ; Franssen, G. ; Bering, A. ; Skierbiszewski, C. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: Novel In-Plane Semiconductor Lasers III.  pp.288-296,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5365
29.

Conference Proceedings
Conference Proceedings
29. Properties of violet laser diodes grown on bulk GaN substrates
Perlin, P. ; Marona, L. ; Swietlik, T. ; Leszczynski, M. ; Prystawko, P. ; Winiewski, P. ; Czernecki, R. ; Franssen, G. ; Grzanka, S. ; Kamler, G. ; Borysiuk, J. ; Weyher, J. ; Grzegory, l. ; Suski, T. ; Porowski, S. ; Riemann, T. ; Christen, J.
Pub. info.: Novel In-Plane Semiconductor Lasers IV.  pp.72-79,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5738