1.

Conference Proceedings
Conference Proceedings
1. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Properties of bulk Gallium Nitride crystals
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Potowski, S. ; Lilenthal-Weber, Z.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.46-57,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
3.

Conference Proceedings
Conference Proceedings
3. Growth and Properties of Bulk Single Crystals of GaN
Suski, T. ; Perlin, P. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Jun, J. ; Bockowski, M. ; Porowski, S. ; Pakula, K. ; Wysmolek, A. ; Baranowski, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.15-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395