1.

Conference Proceedings
Conference Proceedings
1. Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes
Tumakha, S.P. ; Porter, L.M. ; Ewing, D.J. ; Wahab, Q. ; Ma, X.Y. ; Sudarshan, T.S. ; Brillson, L.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.907-910,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. A Study of Inhomogeneous Schottky Diodcs on n-Type 4H-SiC
Ewing, D.J. ; Wahab, Q. ; Tumakha, S.P. ; Brillson, L.J. ; Ma, X.Y. ; Sudarshan, T.S. ; Porter, L.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.911-914,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Open Core Dislocations and Surface Energy of SiC
Maximenko, S.I. ; Pirouz, P. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.439-442,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
Syvajarvi, M. ; Yakimova, R. ; Yazdi, G.R. ; Arjunan, A. ; Toupitsyn, E. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.227-230,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?
Zhang, Z.H. ; Shrivastava, A. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.419-422,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
Soloviev, S.I. ; Sandvik, P. ; Arthur, S.D. ; Matocha, K.S. ; Maximenko, S.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.427-430,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Performance of Silicon Carbide PiN Diodcs Fabricated on Basal Plane Dislocation-Free Epilayers
Zhang, Z.H. ; Grekov, A.E. ; Sadagopan, P. ; Maximenko, S.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.371-374,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Recombination Behavior of Stacking Faults in SiC p-i-A Diodes
Maximenko, S.I. ; Pirouz, P. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.367-370,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters
Drachev, R. ; Deyneka, E. ; Rhodes, C. ; Schupp, J. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.15-20,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. Oxidation of Porous 4H-SiC Substrates
Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1113-1118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth
Cherednichenko, D.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Deng, X. ; Sudarshan, T.S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.131-136,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
12.

Conference Proceedings
Conference Proceedings
12. Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
Agueev, O. A. ; Avdeev, S. P. ; Svetlichnyi, A. M. ; Konakova, R. V. ; Milenin, V. V. ; Lytvyn, P. M. ; Lytvyn, O. S. ; Okhrimenko, O. B. ; Soloviev, S. I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.725-728,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
13.

Conference Proceedings
Conference Proceedings
13. Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion
Gao, Ying ; Soloviev, S.I. ; Wang, X. ; Tin, C.C. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
14.

Conference Proceedings
Conference Proceedings
14. Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes
Zhang, Q. ; Madangarli, V. ; Gao, Y. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
15.

Conference Proceedings
Conference Proceedings
15. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes
Soloviev, S. ; Cherednichenko, D. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.525-528,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
17.

Conference Proceedings
Conference Proceedings
17. Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
Bondokov, R.T. ; Tipirneni, N. ; Cherednichenko, D.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.431-436,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
18.

Conference Proceedings
Conference Proceedings
18. Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
Ma, X. ; Parker, M. ; Ma, Y. ; Kubota, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.361-364,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
19.

Conference Proceedings
Conference Proceedings
19. Aluminum and Boron Diffusion into (1-100) Face SiC Substrates
Soloviev, S.I. ; Gao, Y. ; Khlebnikov, Y. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.557-560,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. Electrical Characterization of Ni/Porous SiC/n-SiC Structure
Grekov, A. ; Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.419-422,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
21.

Conference Proceedings
Conference Proceedings
21. Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Drachev, R.V. ; Cherednichenko, D.I. ; Khlebnikov, I.I. ; Khlebnikov, Y.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.99-102,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
22.

Conference Proceedings
Conference Proceedings
22. Rheological parameter estimation for a ferrous-nanoparticle-based magnetorheological fluid using genetic algorithms
Chaudhuri, A. ; Wereley, N.M. ; Radhakrishnan, R. ; Sudarshan, T.S.
Pub. info.: Smart structures and materials 2004 : active materials : behavior and mechanics : 15-18 March 2004, San Diego, California, USA.  pp.503-512,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5387
23.

Conference Proceedings
Conference Proceedings
23. Oxidation of Porous 4H-SiC Substrates
Soloviev, S. ; Das, T. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1113-1118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
24.

Conference Proceedings
Conference Proceedings
24. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
Zhang, Z.H. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.243-246,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529