1.

Conference Proceedings
Conference Proceedings
1. Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.77-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Bulk Breakdown in AlGaN/GaN HFETs
Gradinaru, G. ; Kao, N. C. ; Gaska, R. ; Yang, J. ; Chen, Q. ; Khan, M. A. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.309-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. High Electric Field Breakdown of 4H-SiC p-n Junction Diodes
Tin, C. C. ; Madangarli, V. ; Hu, R. ; Luckowski, E. ; Casady, J. ; Isaacs-Smith, T. ; Gradinaru, G. ; Sudarshan, T. S. ; Johnson, R. W.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.111-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
4.

Conference Proceedings
Conference Proceedings
4. Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique
Sudarshan, T. S. ; Madangarli, V. P. ; Gradinaru, G. ; Tin, C. C. ; Hu, R. ; Isaacs-Smith, T.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.99-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
5.

Conference Proceedings
Conference Proceedings
5. Imaging of Micropipes in Silicon Carbide Under High Field Stress
Gradinaru, G. ; Helmi, M. ; Khlebnikov, Y. ; Korony, G. ; Mitchel, W. C. ; Sudarshan, T. S.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.643-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442